Title:
METHOD FOR OPTIMIZING FIXED LAYER IN MTJ STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2022/135153
Kind Code:
A1
Abstract:
Provided by the present invention is a method for optimizing a fixed layer in a magnetic tunnel junction (MTJ) structure, comprising the following steps: reducing the thickness of the magnetic layer of the fixed layer; adjusting the magnetic moment of each magnetic layer so that the bias field of the fixed layer at the free layer matches a set value. In comparison with the prior art, the method for optimizing the fixed layer in an MTJ structure provided by the present invention can, without affecting the overall stability of the MTJ structure, reduce the thickness of the fixed layer and thereby reduce MTJ etching damage. Experimental results clearly indicate that the method for optimizing a fixed layer in an MTJ structure provided by the present invention reduces MTJ etching damage while not affecting the stability of the reference layer, and additionally, reduces the thickness of the overall memory cell, facilitating reduction of the etching time, and provides more options for scaling to smaller sizes using lithography (Litho) and hard masks (HM).
Inventors:
HAN GUCHANG (CN)
WANG MING (CN)
YANG XIAOLEI (CN)
AI LIBO (CN)
ZHANG KAIYE (CN)
LIU BO (CN)
WANG MING (CN)
YANG XIAOLEI (CN)
AI LIBO (CN)
ZHANG KAIYE (CN)
LIU BO (CN)
Application Number:
PCT/CN2021/136389
Publication Date:
June 30, 2022
Filing Date:
December 08, 2021
Export Citation:
Assignee:
ZHEJIANG HIKSTOR TECH CO LTD (CN)
International Classes:
H01L43/08
Foreign References:
| CN101548330A | 2009-09-30 | |||
| CN110112287A | 2019-08-09 | |||
| US20020141120A1 | 2002-10-03 | |||
| US20100308923A1 | 2010-12-09 |
Attorney, Agent or Firm:
UNITALEN ATTORNEYS AT LAW (CN)
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