Title:
METHOD FOR ORGANIC MONOMOLECULAR LAYER FORMATION AND PROCESS FOR PRODUCING FUNCTIONAL ELEMENT
Document Type and Number:
WIPO Patent Application WO/2006/049189
Kind Code:
A1
Abstract:
A hydrogen terminating n-type semiconductor substrate, which comprises at least one element selected from the group consisting of Si, Ge, and C and has a diamond structure, is used as a working electrode. While selectively applying light having a higher photon energy than the energy gap of the hydrogen terminating n-type semiconductor substrate to the surface of the hydrogen terminating n-type semiconductor substrate, an electrode reaction is allowed to proceed in a solution containing a Grignard reagent to form a predetermined pattern of an organic monomolecular layer on the surface of the hydrogen terminating n-type semiconductor substrate.
More Like This:
Inventors:
UOSAKI KOHEI
TAKAKUSAGI SATORU
TAKAKUSAGI SATORU
Application Number:
PCT/JP2005/020153
Publication Date:
May 11, 2006
Filing Date:
October 27, 2005
Export Citation:
Assignee:
UNIV HOKKAIDO NAT UNIV CORP (JP)
UOSAKI KOHEI
TAKAKUSAGI SATORU
UOSAKI KOHEI
TAKAKUSAGI SATORU
International Classes:
B82B3/00; B05D7/24; H01L21/368; H01L51/05
Foreign References:
| US20020197389A1 | 2002-12-26 | |||
| US6284317B1 | 2001-09-04 | |||
| US20030021967A1 | 2003-01-30 | |||
| JP2003309061A | 2003-10-31 | |||
| JP2005079410A | 2005-03-24 | |||
| JP2005161266A | 2005-06-23 |
Other References:
YAMADA T. ET AL.: "Evaluation of Organic Monolayers Formed on Si(111): Exploring the Possibilities for Application in Electron Beam Nanoscale Patterning", JAPANESE JOURNAL OF APPLIED PHYSICS. PART 1, THE INSTITUTE OF PURE AND APPLIED PHYSICS, vol. 40, no. 8, 15 August 2001 (2001-08-15), pages 4845 - 4853, XP001110886
MASUDA T. AND UOSAKI K.: "Construction of Organic Monolayers with Electron Transfer Function on a Hydrogen Terminated Si(111) Surface via Silicon-Carbon Bond and Their Electrochemical Characteristics in Dark and Under Illumination", CHEMISTRY LETTERS, CSJ: THE CHEMICAL SOCIETY OF JAPAN, vol. 33, no. 7, 5 July 2004 (2004-07-05), pages 788 - 789, XP002998028
UOSAKI K., SATO Y., KONDO T.: "Jiko Soshikika Tanbunshiso Shushoku Denkyoku ni okeru Denshi Ido Hanno", KAGAKU KOGYO, KAGAKU KOGYOSHA, vol. 45, no. 12, 1 December 1993 (1993-12-01), pages 9 - 15, XP003007370
YAMADA T., TAKANO N., OSAKA T.: "Electron beam nanometer-scale Fabrication of Si(111) usng alkyl monolayers", RIKEN REVIEW, RIKEN, no. 45, March 2002 (2002-03-01), pages 9 - 21, XP003007371
BOUKHERROUB R. ET AL.: "New Synthetic Routes to Alkyl Monolayers on the Si(111) Surface", LANGMUIR, THE AMERICAN CHEMICAL SOCIETY, vol. 15, no. 11, 25 May 1999 (1999-05-25), pages 3831 - 3835, XP000925257
MASUDA T. AND UOSAKI K.: "Construction of Organic Monolayers with Electron Transfer Function on a Hydrogen Terminated Si(111) Surface via Silicon-Carbon Bond and Their Electrochemical Characteristics in Dark and Under Illumination", CHEMISTRY LETTERS, CSJ: THE CHEMICAL SOCIETY OF JAPAN, vol. 33, no. 7, 5 July 2004 (2004-07-05), pages 788 - 789, XP002998028
UOSAKI K., SATO Y., KONDO T.: "Jiko Soshikika Tanbunshiso Shushoku Denkyoku ni okeru Denshi Ido Hanno", KAGAKU KOGYO, KAGAKU KOGYOSHA, vol. 45, no. 12, 1 December 1993 (1993-12-01), pages 9 - 15, XP003007370
YAMADA T., TAKANO N., OSAKA T.: "Electron beam nanometer-scale Fabrication of Si(111) usng alkyl monolayers", RIKEN REVIEW, RIKEN, no. 45, March 2002 (2002-03-01), pages 9 - 21, XP003007371
BOUKHERROUB R. ET AL.: "New Synthetic Routes to Alkyl Monolayers on the Si(111) Surface", LANGMUIR, THE AMERICAN CHEMICAL SOCIETY, vol. 15, no. 11, 25 May 1999 (1999-05-25), pages 3831 - 3835, XP000925257
Attorney, Agent or Firm:
Mori, Koh-ichi (9th Floor Soft Town Ikebukuro, 36-1, Nishi
Ikebukuro 2-chom, Toshima-ku Tokyo, JP)
Download PDF: