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Title:
METHOD FOR ORGANIC SEMICONDUCTOR MATERIAL THIN FILM FORMATION AND PROCESS FOR PRODUCING ORGANIC THIN FILM TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2006/137233
Kind Code:
A1
Abstract:
This invention provides a method for the formation of an organic semiconductor material film having improved mobility on a substrate, and a process for producing an organic thin film transistor which can develop high performance by utilizing the method. The production process of an organic thin film transistor utilizes the method for organic semiconductor material film formation, comprising coating an organic semiconductor material-containing liquid onto a surface of a substrate to form a semiconductor material thin film. The method for organic semiconductor material thin film formation is characterized in that, when the surface free energy of the surface of the substrate is &gammad S = &gammad Sd + &gammad Sp + &gammad Sh wherein &gammad Sd, &gammad Sp and &gammad Sh respectively represent the nonpolar component, polar component, and hydrogen bond component of the surface free energy of the solid surface based on the Young-Fowkes equation, the surface free energy of a solvent in the liquid is &gammad L = &gammad Ld + &gammad Lp + &gammad Lh wherein &gammad Ld, &gammad Lp and &gammad Lh respectively represent the nonpolar component, polar component, and hydrogen bond component of the surface free energy of the liquid based on the Young-Fowkes equation, the value of &gammad Sh - &gammad Lh is not less than -5 mN/m and not more than 20 mN/m, and that the hydrogen bond component &gammad Sh of the surface free energy on the substrate surface is 0 <&gammad Sh < 20 (mN/m).

Inventors:
SUGISAKI REIKO (JP)
TAKEMURA CHIYOKO (JP)
HIRAI KATSURA (JP)
Application Number:
PCT/JP2006/310177
Publication Date:
December 28, 2006
Filing Date:
May 23, 2006
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Assignee:
KONICA MINOLTA HOLDINGS INC (JP)
SUGISAKI REIKO (JP)
TAKEMURA CHIYOKO (JP)
HIRAI KATSURA (JP)
International Classes:
H01L21/368; H01L21/336; H01L29/786; H01L51/40
Foreign References:
JP2004273678A2004-09-30
JP2004214482A2004-07-29
JP2004006758A2004-01-08
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