Title:
METHOD FOR PATTERN FORMATION AND HIGH-CARBON-CONTAINING RESIN COMPOSITION
Document Type and Number:
WIPO Patent Application WO/2007/142209
Kind Code:
A1
Abstract:
This invention provides a method for pattern formation that, in a lithography
process, forms a pattern having satisfactory etching resistance under conditions
for etching of an object substrate. The method comprises the step of forming
a resist pattern on an object substrate, the step of embedding a polymer, which
has better etching resistance than the resist pattern and does not contain any
silicon atom in its molecule, in concaves in the pattern and the step of selectively
etching and removing only the resist pattern to form a pattern of the polymer on
the object substrate.The polymer embedded in the step of embedding is a polymer
having an aromatic ring in its molecule, and, after the step of embedding the polymer,
radiation irradiation treatment is carried out.
More Like This:
Inventors:
SUGITA, Hikaru (())
杉田 光 (())
SUGIE, Norihiko (())
杉江 紀彦 (())
ISHIDA, Hidemitsu (())
杉田 光 (())
SUGIE, Norihiko (())
杉江 紀彦 (())
ISHIDA, Hidemitsu (())
Application Number:
JP2007/061322
Publication Date:
December 13, 2007
Filing Date:
June 05, 2007
Export Citation:
Assignee:
JSR CORPORATION (5-6-10, Tsukiji Chuo-k, Tokyo 10, 1048410, JP)
ＪＳＲ株式会社 (〒10 東京都中央区築地五丁目６番１０号 Tokyo, 1048410, JP)
SUGITA, Hikaru (())
杉田 光 (())
SUGIE, Norihiko (())
杉江 紀彦 (())
ＪＳＲ株式会社 (〒10 東京都中央区築地五丁目６番１０号 Tokyo, 1048410, JP)
SUGITA, Hikaru (())
杉田 光 (())
SUGIE, Norihiko (())
杉江 紀彦 (())
International Classes:
G03F7/40; H01L21/027; G03F7/40; H01L21/02
Attorney, Agent or Firm:
WAKI, Misao (2-6 Shiroyama 1-chome, Toin-cho Inabe-gun, Mie 33, 5110233, JP)
Download PDF: