Title:
A METHOD OF PATTERNING PHOTORESIST ON A WAFER USING AN ATTENUATED PHASE SHIFT MASK
Document Type and Number:
WIPO Patent Application WO2004079779
Kind Code:
A3
Abstract:
An attenuated phase shift mask (10 or 20) includes a substrate (12 or 22) and an attenuation stack (11 or 21) overlying the substrate. The attenuation stack includes a chromium layer or ruthenium layer (14 or 24) overlying the substrate, a tantalum silicon oxide layer (16 or 26) overlying the chromium layer or the ruthenium layer, and a tantalum silicon nitride layer (18 or 28) overlying the tantalum silicon oxide layer. The attenuation stack may also include a layer (30) between the substrate (22) and the chromium or ruthenium layer (24). In one embodiment, this layer is a portion of the substrate. The attenuation stack is used to pattern photoresist (50) on a semiconductor wafer. In one embodiment, portions of the substrate adjacent the attenuation stack has a transmission of greater than 90 percent and the attenuation stack has a transmission of 5 to 20 percent at the exposure wavelength. In one embodiment, an inspection contrast between the substrate and the attenuation stack at an inspection wavelength is greater than 75 percent.
More Like This:
| WO/2005/101112 | OPTICAL FILMS AND METHODS OF MAKING THE SAME |
Inventors:
WASSON JAMES R (US)
MANGAT PAWITTER (US)
MANGAT PAWITTER (US)
Application Number:
PCT/US2004/004327
Publication Date:
February 10, 2005
Filing Date:
February 13, 2004
Export Citation:
Assignee:
FREESCALE SEMICONDUCTOR INC (US)
WASSON JAMES R (US)
MANGAT PAWITTER (US)
WASSON JAMES R (US)
MANGAT PAWITTER (US)
International Classes:
G03C5/00; G03F1/32; G03F9/00; G03G16/00; G21K5/00; H01L21/027; G03F1/00; H01L; (IPC1-7): G03F9/00; G21K5/00; G03G16/00; G03C5/00
Foreign References:
| US6511778B2 | 2003-01-28 | |||
| US6503669B2 | 2003-01-07 |
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