Title:
A METHOD OF PATTERNING PHOTORESIST ON A WAFER USING A REFLECTIVE MASK WITH A MULTI-LAYER ARC
Document Type and Number:
WIPO Patent Application WO2004079780
Kind Code:
A3
Abstract:
A patterned reflective semiconductor mask (10) uses a multiple layer ARC (24, 26, 28) overlying an absorber stack (22) that overlies a reflective substrate (12, 14). The absorber stack has more than one layer and an upper layer of the absorber stack has a predetermined metal. The multiple layer ARC overlying the upper layer of the absorber stack has layers of nitrogen, oxygen and nitrogen combined with the predetermined metal of the upper layer of the absorber stack. The oxygen layer in the ARC has less metallic properties than the nitrogen layers therein. In one form, an overlying dielectric layer (30) is positioned on the multiple layer ARC to increase light interference. The ARC provides wide bandwidth inspection contrast for extreme ultra-violet (EUV) reticles.
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| JPS6337341 | PATTERN FORMING METHOD |
Inventors:
WASSON JAMES R (US)
MANGAT PAWITTER (US)
MANGAT PAWITTER (US)
Application Number:
PCT/US2004/004328
Publication Date:
May 12, 2005
Filing Date:
February 13, 2004
Export Citation:
Assignee:
FREESCALE SEMICONDUCTOR INC (US)
WASSON JAMES R (US)
MANGAT PAWITTER (US)
WASSON JAMES R (US)
MANGAT PAWITTER (US)
International Classes:
G03C5/00; G03F1/24; G03F1/54; G03F9/00; G06K9/00; G21K5/00; H01L21/027; G03F1/00; H01L; (IPC1-7): G03C5/00; G21K5/00; G03F9/00; G06K9/00
Foreign References:
| US6511778B2 | 2003-01-28 | |||
| US6503699B1 | 2003-01-07 |
Other References:
See also references of EP 1602007A4
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