Title:
METHOD OF PLASMA TREATMENT AND PROCESS FOR PRODUCING ELECTRONIC APPLIANCE
Document Type and Number:
WIPO Patent Application WO/2005/096363
Kind Code:
A1
Abstract:
The application of oxynitriding treatment to electronic appliances involve the problem that N2 ions are formed to thereby damage any oxynitride film. It is intended to provide a method of plasma treatment capable of realizing high-quality oxynitriding and to provide a process for producing an electronic appliance in which use is made of the method of plasma treatment. There is provided a method of plasma treatment, comprising generating plasma with a gas for plasma excitation and introducing a treating gas in the plasma to thereby treat a treatment subject, wherein the treating gas contains nitrous oxide gas, this nitrous oxide gas introduced in a plasma of < 2.24 eV electron temperature, so that the generation of ions tending to damage any insulating film is reduced to thereby realize high-quality oxynitriding. Further, there is provided a process for producing an electronic appliance in which use is made of the method of plasma treatment.
Inventors:
OHMI TADAHIRO (JP)
TERAMOTO AKINOBU (JP)
YAMAUCHI HIROSHI (JP)
HAYAKAWA YUKIO (JP)
TERAMOTO AKINOBU (JP)
YAMAUCHI HIROSHI (JP)
HAYAKAWA YUKIO (JP)
Application Number:
PCT/JP2005/006259
Publication Date:
October 13, 2005
Filing Date:
March 31, 2005
Export Citation:
Assignee:
OHMI TADAHIRO (JP)
TERAMOTO AKINOBU (JP)
YAMAUCHI HIROSHI (JP)
HAYAKAWA YUKIO (JP)
TERAMOTO AKINOBU (JP)
YAMAUCHI HIROSHI (JP)
HAYAKAWA YUKIO (JP)
International Classes:
H05H1/46; H01L21/28; H01L21/3105; H01L21/314; H01L21/318; H01L21/8246; H01L21/8247; H01L27/115; H01L29/788; H01L29/792; (IPC1-7): H01L21/318; H01L21/8247; H01L27/115; H01L29/788; H01L29/792; H05H1/46
Foreign References:
| JP2003068731A | 2003-03-07 | |||
| JP2003183839A | 2003-07-03 |
Attorney, Agent or Firm:
Ikeda, Noriyasu (4-10 Nishishinbashi 1-chom, Minato-ku Tokyo 03, JP)
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