Title:
METHOD FOR POLISHING GERMANIUM WAFER
Document Type and Number:
WIPO Patent Application WO/2016/017063
Kind Code:
A1
Abstract:
The present invention is a method for polishing a germanium wafer having a surface made of germanium, in which a hydrogen peroxide solution is added to a first polishing slurry, which is an alkaline aqueous solution containing colloidal silica, and the surface of the germanium wafer is polished using a second polishing slurry having the hydrogen peroxide solution added thereto. The method is characterized by: adding the hydrogen peroxide solution to the first polishing slurry at a concentration corresponding to the concentration achieved when a 30 wt% hydrogen peroxide solution is added in a volume greater than 0 vol% and equal to or less than 0.1 vol% of the volume of the first polishing slurry; and polishing the wafer using the second polishing slurry having the hydrogen peroxide solution added thereto. This provides a method for polishing a germanium wafer in which the surface roughness of the Ge surface after being polished can be sufficiently reduced, and interface defects, such as voids or blisters, can be satisfactorily inhibited from occurring even when the germanium wafer is used as a bonding wafer.
Inventors:
NAGAOKA YASUO (JP)
AGA HIROJI (JP)
AGA HIROJI (JP)
Application Number:
PCT/JP2015/003046
Publication Date:
February 04, 2016
Filing Date:
June 18, 2015
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
International Classes:
H01L21/304; B24B37/00; C09G1/02; C09K3/14
Domestic Patent References:
| WO2013157442A1 | 2013-10-24 | |||
| WO2013018015A2 | 2013-02-07 |
Foreign References:
| JPH10270401A | 1998-10-09 | |||
| JP2013533614A | 2013-08-22 | |||
| JP2008529280A | 2008-07-31 |
Other References:
See also references of EP 3176810A4
Attorney, Agent or Firm:
YOSHIMIYA, Mikio (JP)
Good Miya Mikio (JP)
Good Miya Mikio (JP)
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