Title:
METHOD FOR POLISHING SILICON WAFER
Document Type and Number:
WIPO Patent Application WO/2012/002525
Kind Code:
A1
Abstract:
A polish-finished surface is subjected to a final polishing treatment using a final polishing solution which contains a weakly basic aqueous solution of nonabrasive grains as the main component. In the final polishing treatment, the weakly basic aqueous solution to be used as the main component of the final polishing solution has such an alkali concentration that the haze value of a final-polished surface of the wafer becomes lower than the haze value of the polish-finished surface of the wafer.
Inventors:
TANIMOTO Ryuichi (2-1 Shibaura 1-chome, Minato-k, Tokyo 34, 〒1058634, JP)
谷本 竜一 (〒34 東京都港区芝浦一丁目２番１号 株式会社ＳＵＭＣＯ内 Tokyo, 〒1058634, JP)
SADOHARA Shinya (2-1 Shibaura 1-chome, Minato-k, Tokyo 34, 〒1058634, JP)
谷本 竜一 (〒34 東京都港区芝浦一丁目２番１号 株式会社ＳＵＭＣＯ内 Tokyo, 〒1058634, JP)
SADOHARA Shinya (2-1 Shibaura 1-chome, Minato-k, Tokyo 34, 〒1058634, JP)
Application Number:
JP2011/065145
Publication Date:
January 05, 2012
Filing Date:
July 01, 2011
Export Citation:
Assignee:
SUMCO CORPORATION (2-1 Shibaura 1-chome, Minato-ku Tokyo, 34, 〒1058634, JP)
株式会社ＳＵＭＣＯ (〒34 東京都港区芝浦一丁目２番１号 Tokyo, 〒1058634, JP)
TANIMOTO Ryuichi (2-1 Shibaura 1-chome, Minato-k, Tokyo 34, 〒1058634, JP)
谷本 竜一 (〒34 東京都港区芝浦一丁目２番１号 株式会社ＳＵＭＣＯ内 Tokyo, 〒1058634, JP)
株式会社ＳＵＭＣＯ (〒34 東京都港区芝浦一丁目２番１号 Tokyo, 〒1058634, JP)
TANIMOTO Ryuichi (2-1 Shibaura 1-chome, Minato-k, Tokyo 34, 〒1058634, JP)
谷本 竜一 (〒34 東京都港区芝浦一丁目２番１号 株式会社ＳＵＭＣＯ内 Tokyo, 〒1058634, JP)
International Classes:
H01L21/304; B24B37/00
Attorney, Agent or Firm:
ABE Itsurou (ABE International Patent Office, Complete Sakaimachi BLDG. 403 9-6, Sakaimachi 1-chome, Kokurakita-ku, Kitakyushu-sh, Fukuoka 05, 〒8020005, JP)
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