Title:
METHOD FOR POLISHING SILICON WAFER
Document Type and Number:
WIPO Patent Application WO/2012/002525
Kind Code:
A1
Abstract:
A polish-finished surface is subjected to a final polishing treatment using a final polishing solution which contains a weakly basic aqueous solution of nonabrasive grains as the main component. In the final polishing treatment, the weakly basic aqueous solution to be used as the main component of the final polishing solution has such an alkali concentration that the haze value of a final-polished surface of the wafer becomes lower than the haze value of the polish-finished surface of the wafer.
Inventors:
TANIMOTO RYUICHI (JP)
SADOHARA SHINYA (JP)
TAKUSHIMA TAKERU (JP)
SADOHARA SHINYA (JP)
TAKUSHIMA TAKERU (JP)
Application Number:
PCT/JP2011/065145
Publication Date:
January 05, 2012
Filing Date:
July 01, 2011
Export Citation:
Assignee:
SUMCO CORP (JP)
TANIMOTO RYUICHI (JP)
SADOHARA SHINYA (JP)
TAKUSHIMA TAKERU (JP)
TANIMOTO RYUICHI (JP)
SADOHARA SHINYA (JP)
TAKUSHIMA TAKERU (JP)
International Classes:
H01L21/304; B24B37/00
Foreign References:
| JP2004128089A | 2004-04-22 | |||
| JP2006005246A | 2006-01-05 | |||
| JPH11243072A | 1999-09-07 | |||
| JPH11330024A | 1999-11-30 | |||
| JP2006352043A | 2006-12-28 |
Attorney, Agent or Firm:
ABE Itsurou (JP)
Itsuro Abe (JP)
Itsuro Abe (JP)
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Claims:
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