Title:
METHOD FOR PREDICTING DEPOSITION SPEED OF SPUTTERING TARGET, SPUTTERING TARGET HAVING DEPOSITION SPEED CONTROLLED THEREBY AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2018/117717
Kind Code:
A1
Abstract:
The present invention relates to a sputtering target and a method for manufacturing the same, the sputtering target identifying a speed index according to a structure of internal organizational characteristics thereof, predicting the deposition speed according to the speed index, and having the deposition speed controlled according to the speed index. The present invention provides, as an embodiment, the sputtering target manufactured by raw material powder including a metal material selected from a metal group, of which a particle structure is a body-centered cubic lattice, a face-centered cubic lattice or a close packed hexagonal lattice, wherein the speed index, which is calculated by measuring plane fractions of the {001}, {011} and {111} planes of the target material in the sputtering target, is 19.3% to 47.3%.
Inventors:
KWON OH-JIB (KR)
HONG GIL-SOO (KR)
PARK JOO-HYEON (KR)
HONG GIL-SOO (KR)
PARK JOO-HYEON (KR)
Application Number:
PCT/KR2017/015298
Publication Date:
June 28, 2018
Filing Date:
December 21, 2017
Export Citation:
Assignee:
HEE SUNG METAL LTD (KR)
International Classes:
C23C14/34; C23C14/54; H01L21/02; H01L21/285
Foreign References:
| KR20140138111A | 2014-12-03 | |||
| KR101679562B1 | 2016-11-25 | |||
| KR20130122965A | 2013-11-11 | |||
| KR20160053418A | 2016-05-13 | |||
| JP2015017299A | 2015-01-29 |
Attorney, Agent or Firm:
C.M. PATENT & LAW FIRM. LLP (KR)
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