METHOD FOR PREPARING ATOMISTICALLY STRAIGHT BOUNDARY JUNCTIONS IN HIGH TEMPERATURE SUPERCONDUCTING OXIDES

Title:

METHOD FOR PREPARING ATOMISTICALLY STRAIGHT BOUNDARY JUNCTIONS IN HIGH TEMPERATURE SUPERCONDUCTING OXIDES

Document Type and Number:

WIPO Patent Application WO/2004/105147

Kind Code:

A1

Abstract:

A method for preparing film oxides deposited on a substrate with a resulting grain boundary junction that is atomistically straight. A bicrystal substrate having a straight grain boundary is prepared as a template. The Miller indices h₁, k₁, h₂, k₂ of the two grains of the substrate are chosen such that the misorientation angle of the film is equal to arctan k₁/h₁ + arctan k₂/h₂. The film is grown on the substrate using a layer-by-layer growth mode.

Inventors:

CHAN SIU-WAI (US)

Application Number:

PCT/US2003/002077

Publication Date:

December 02, 2004

Filing Date:

January 23, 2003

Export Citation:

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Assignee:

UNIV COLUMBIA (US)
CHAN SIU-WAI (US)

International Classes:

H01L39/24; (IPC1-7): H01L39/24; B05D5/12

Foreign References:

US5856205A	1999-01-05
US5278140A	1994-01-11
US5981443A	1999-11-09

Attorney, Agent or Firm:

Tang, Henry (30 Rockefeller Plaza New York, NY, US)

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