METHOD FOR PREPARING CARBON NANOSTRUCTURE - SUMITOMO ELECTRIC INDUSTRIES

Title:

METHOD FOR PREPARING CARBON NANOSTRUCTURE

Document Type and Number:

WIPO Patent Application WO/2005/121023

Kind Code:

A1

Abstract:

A method for preparing a carbon nanostructure wherein a carbon crystal is grown by the vapor phase growth from the crystal growth plane of a catalyst substrate (17) containing a catalyst material (11), and wherein the catalyst substrate (17) is formed through a diameter reduction working. It is preferred that the catalyst substrate (17) is formed as a collection of a plurality of catalyst structures wherein a non-catalyst material (12) having substantially no catalytic action to the growth of a carbon crystal is formed on at least a part of the side surface of a columnar catalyst material (11) having the crystal growth plane as its top surface. It is also preferred that a non-catalyst material (15) is formed on at least a part of the side surface of the collection and that a variation in the surface area of the catalyst material (11) in the crystal growth plane between catalyst structures is CV 10 % or less. The above method can be employed for improving the uniformity in the shape of the carbon nanostructure and the purity of the structure, while reducing the cost for the preparation thereof.

Inventors:

HIKATA TAKESHI (JP)

Application Number:

PCT/JP2005/009154

Publication Date:

December 22, 2005

Filing Date:

May 19, 2005

Export Citation:

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Assignee:

SUMITOMO ELECTRIC INDUSTRIES (JP)
HIKATA TAKESHI (JP)

International Classes:

B01J35/02; B01J23/745; C01B31/02; (IPC1-7): C01B31/02; B01J23/745

Foreign References:

JPH1088256A

1998-04-07

Other References: