Title:
THE METHOD OF PREPARING COMPOSITE SUBSTRATE MATERIALS OF &gammad -LiAlO2 /&agr -Al2 O3
Document Type and Number:
WIPO Patent Application WO/2005/001907
Kind Code:
A1
Abstract:
A method of preparing composite substrate materials of -&gammad -LiAlO2/&agr -Al2O3 comprise the steps of: laying LiAlO2 and Li2O mixed mass with pore in the platinum pot; on the platinum wire, laying or hanging the sapphire &agr -Al2O3 wafer that have been polished at single or both sides, putting the pot lid to cover LiAlO2 and Li2O mixed powders and thermocouple, sealing the top of pot with the platinum cover, then placing it in the resistance furnace; heating the resistance furnace up to about 1000-1400°C and maintaining the temperature for 20-100 hours, then the Li2O will diffuse into the &agr -Al2O3 wafer, and &gammad -LiAlO2/&agr -Al2O3 composite substrate materials can be obtained after lowering the temperature. The present invention overcomes the problems that the mismatching level of &agr -Al2O3 crystal lattice and the difficulty of achieving the big size and high quality LiAlO2 single crystal substrate and or so, and can be used in epitaxial growing of the high quality InN-GaN film.
Inventors:
XU JUN (CN)
WANG HAILI (CN)
ZHOU SHENGMING (CN)
YANG WEIQIAO (CN)
PENG GUANLIANG (CN)
ZHOU GUOQING (CN)
JIANG CHENGYONG (CN)
SONG CI (CN)
HANG YIN (CN)
SI JILIANG (CN)
ZHAO GUANGJUN (CN)
WANG HAILI (CN)
ZHOU SHENGMING (CN)
YANG WEIQIAO (CN)
PENG GUANLIANG (CN)
ZHOU GUOQING (CN)
JIANG CHENGYONG (CN)
SONG CI (CN)
HANG YIN (CN)
SI JILIANG (CN)
ZHAO GUANGJUN (CN)
Application Number:
PCT/CN2004/000303
Publication Date:
January 06, 2005
Filing Date:
April 02, 2004
Export Citation:
Assignee:
SHANGHAI INST OPTICS & FINE ME (CN)
XU JUN (CN)
WANG HAILI (CN)
ZHOU SHENGMING (CN)
YANG WEIQIAO (CN)
PENG GUANLIANG (CN)
ZHOU GUOQING (CN)
JIANG CHENGYONG (CN)
SONG CI (CN)
HANG YIN (CN)
SI JILIANG (CN)
ZHAO GUANGJUN (CN)
XU JUN (CN)
WANG HAILI (CN)
ZHOU SHENGMING (CN)
YANG WEIQIAO (CN)
PENG GUANLIANG (CN)
ZHOU GUOQING (CN)
JIANG CHENGYONG (CN)
SONG CI (CN)
HANG YIN (CN)
SI JILIANG (CN)
ZHAO GUANGJUN (CN)
International Classes:
C30B25/02; C30B25/18; C30B29/20; C30B33/00; H01L21/20; (IPC1-7): H01L21/00; C30B11/00; H01L21/20; H01L33/00
Foreign References:
| CN1399308A | 2003-02-26 | |||
| CN1189545A | 1998-08-05 | |||
| US4704266A | 1987-11-03 | |||
| US5625202A | 1997-04-29 |
Other References:
ZHAOXIA, B. ET AL.: "Preparation of ZnAL2O4/alpha-AL2O3composite substrate And growth of GaN thin film", SCIENCE IN CHINA (SERIES A), vol. 32, no. 10, October 2002 (2002-10-01)
Attorney, Agent or Firm:
SHANGHAI XIN TIAN PATENT AGENT CO., LTD. (No. 59 Nan Chang Road, Shanghai 0, CN)
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