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Title:
METHOD FOR PREPARING DOMAIN WALL MEMORY, AND DOMAIN WALL MEMORY
Document Type and Number:
WIPO Patent Application WO/2023/004874
Kind Code:
A1
Abstract:
The present invention provides a method for preparing an organic ferroelectric domain wall memory, comprising the following steps: providing a substrate; manufacturing an opposite metal comb-like electrode on the substrate; performing hydrophilic and hydrophobic treatment on the surface of the substrate; forming a molecular ferroelectric functional layer on the surface of the substrate by using a selective growth method; and annealing to obtain the domain wall memory. According to the technical solution, a domain wall conductive channel is formed on the basis of multi-stage length channels of the comb counter electrode and the partial polarization of an organic ferroelectric layer. By using a selective low-tension drop coating method, a polarization axis is guided to be controllably grown while the costs and complexity are reduced. Compared with a conventional ferroelectric memory using polarization flipping and displacement current write and read, the ferroelectric memory has the advantages such as non-destructive reading, large current signal, and long service life. The present invention can be used in the fields of novel storage arrays, flexible integrated ferroelectric chips, and the like.

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Inventors:
HU LAIGUI (CN)
CAI YICHEN (CN)
ZHAN YIQIANG (CN)
QIN YAJIE (CN)
Application Number:
PCT/CN2021/111182
Publication Date:
February 02, 2023
Filing Date:
August 06, 2021
Export Citation:
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Assignee:
GUANGHUA LINGANG ENGINEERING APPLICATION AND TECH R&D SHANGHAI CO LTD (CN)
International Classes:
G11C11/22
Foreign References:
CN113140676A2021-07-20
CN110416216A2019-11-05
CN113161494A2021-07-23
CN101034667A2007-09-12
US20060290021A12006-12-28
CN108389962A2018-08-10
CN103848997A2014-06-11
Attorney, Agent or Firm:
SHANGHAI WINSUN INTELLECTUAL PROPERTY AGENCY (CN)
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