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Title:
METHOD FOR PREPARING LOW-MELTING-POINT PLATING SOLUTION FOR ELECTRICAL ALUMINUM PLATING, PLATING SOLUTION FOR ELECTRICAL ALUMINUM PLATING, METHOD FOR PRODUCING ALUMINUM FOIL, AND METHOD FOR LOWERING MELTING POINT OF PLATING SOLUTION FOR ELECTRICAL ALUMINUM PLATING
Document Type and Number:
WIPO Patent Application WO/2013/129479
Kind Code:
A1
Abstract:
The present invention is characterized in that, in the preparation of a plating solution comprising at least (1) a dialkyl sulfone, (2) an aluminum halide and (3) a nitrogenated compound, the dialkyl sulfone, the aluminum halide and the nitrogenated compound are compounded at such a ratio that the amount of the aluminum halide is 3.5+n to 4.2+n mole(s) and the amount of the nitrogenated compound is n mole(s) (wherein n is 0.001 to 2.0 moles) relative to 10 moles of the dialkyl sulfone. A plating solution for electrical aluminum plating, which is prepared by the method according to the present invention, enables an electrical plating treatment with high aluminum deposition efficiency relative to the amount of electricity supplied, and therefore enables the reduction in electricity usage and has the advantage of excellent economic efficiency.

Inventors:
OKAMOTO ATSUSHI (JP)
MATSUDA JUNICHI (JP)
Application Number:
PCT/JP2013/055149
Publication Date:
September 06, 2013
Filing Date:
February 27, 2013
Export Citation:
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Assignee:
HITACHI METALS LTD (JP)
International Classes:
C25D3/44; C25D1/04
Domestic Patent References:
WO2011001932A12011-01-06
WO2011001932A12011-01-06
Foreign References:
JP2010232171A2010-10-14
JPH01104791A1989-04-21
JP4609777B22011-01-12
JPH0693490A1994-04-05
Other References:
See also references of EP 2821529A4
Attorney, Agent or Firm:
TSUJITA Takashi et al. (JP)
Yukifumi Tsujita (JP)
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Claims: