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Title:
METHOD FOR PREPARING NANO-POROUS METAL MATERIAL
Document Type and Number:
WIPO Patent Application WO/2019/100517
Kind Code:
A1
Abstract:
Provided is a method for preparing a nano-porous metal material. The method comprises: 1) performing film layer growth of a metal and a semiconductor material on a substrate to obtain a semiconductor/metal double-layer film; 2) annealing the prepared semiconductor/metal double-layer film; and 3) selectively etching the annealed semiconductor/metal double-layer film to remove the semiconductor, so as to obtain the nano-porous metal material. On the basis of the research achievement of preparing a semiconductor thin film at a low temperature by a metal-induced crystallization method, the method utilizes the reaction between solid phases to achieve nano-crystallization, and thus can prepare the nano-porous pure metal and alloy materials well; and moreover, the substrate material is not limited. The method is an inexpensive and high-efficiency method for preparing a nano-porous metal material, overcomes the problems such as a low efficiency and a poor scale expansion of a traditional method for preparing a nano-porous metal material, and easily achieves large-scale industrial application.

Inventors:
WANG ZUMIN (CN)
ZHANG AN (CN)
Application Number:
CN2017/119010
Publication Date:
May 31, 2019
Filing Date:
December 27, 2017
Export Citation:
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Assignee:
UNIV TIANJIN (CN)
International Classes:
C23C14/34; B82Y40/00; C23C14/16; C23C14/20; C23C14/24; C23C14/58
Domestic Patent References:
WO2016126549A12016-08-11
Foreign References:
CN102677163A2012-09-19
CN101298682A2008-11-05
Other References:
ZHANG, RENJI ET AL: "Crystallization of amorphous Ge in Ge/Au, Ge/Ag bilayer films and Ge-Au, Ge-Ag alloy films", ACTA PHYSICA SINICA, vol. 35, no. 3, 31 March 1986 (1986-03-31), pages 365 - 374, XP055613723
Attorney, Agent or Firm:
BEI & OCEAN (CN)
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