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Patent Searching and Data


Title:
METHOD FOR PREPARING POLYMER DIELECTRIC LAYER FOR THIN-FILM TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2018/194220
Kind Code:
A1
Abstract:
The present invention can increase the dielectric characteristics of a dielectric layer by using initiated chemical vapor deposition (iCVD) and cross-linking, by a cross-linking having a divinyl ether functional group, a monomer having a cyanide or hydroxyl functional group and exhibiting a high dielectric constant, and exhibits a very small leakage current even at a very small thickness of 20-100 mm so as to be applied to a TFT using an organic semiconductor and an oxide semiconductor, thereby enabling a high-performance TFT having a low driving voltage to be manufactured.

Inventors:
IM, Sung Gap (291 Daehak-ro, Yuseong-gu, Daejeon, 34141, KR)
CHOI, Junhwan (291 Daehak-ro, Yuseong-gu, Daejeon, 34141, KR)
JOO, Munkyu (291 Daehak-ro, Yuseong-gu, Daejeon, 34141, KR)
Application Number:
KR2017/008697
Publication Date:
October 25, 2018
Filing Date:
August 10, 2017
Export Citation:
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Assignee:
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (291 Daehak-ro, Yuseong-gu, Daejeon, 34141, KR)
International Classes:
C23C16/44; C23C16/448; H01L29/49
Foreign References:
KR20150125666A2015-11-09
KR101001441B12010-12-14
KR20120130981A2012-12-04
KR20080102109A2008-11-24
EP2028432A12009-02-25
Attorney, Agent or Firm:
LEE, Cheo Young et al. (11F, Teheran-ro 123Gangnam-gu, Seoul, 06133, KR)
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