Title:
METHOD FOR PREPARING SELF-PASSIVATING QUANTUM DOTS
Document Type and Number:
WIPO Patent Application WO/2016/086511
Kind Code:
A1
Abstract:
A method for preparing self-passivating quantum dots, comprising: adding quantum dot cores and a solvent to a reaction vessel, and controlling the temperature and vacuumizing; introducing an inert gas into the reaction vessel; using a successive ionic layer absorption and reaction method, injecting a solution of a clad material precursor into the reaction vessel to clad the quantum dot cores so as to obtain quantum dots doped with a self-passivating element M (M=Al, Zr, Fe, Ti, Cr, Ta, Si or Ni); the quantum dot cores are quantum dot cores already doped with M or quantum dot cores not doped with M, and when cladding the quantum dots, the clad material precursor contains an M precursor or does not contain an M precursor; and when the quantum dot cores are the quantum dot cores not doped with M, the clad material precursor contains the M precursor, the prepared quantum dots have a relatively good morphology, and the light stability is improved significantly.
Inventors:
LI LIANG (CN)
LI ZHICHUN (CN)
LI ZHICHUN (CN)
Application Number:
PCT/CN2015/070161
Publication Date:
June 09, 2016
Filing Date:
January 06, 2015
Export Citation:
Assignee:
UNIV SHANGHAI JIAOTONG (CN)
International Classes:
C09K11/88
Foreign References:
| CN103952136A | 2014-07-30 | |||
| CN101948686A | 2011-01-19 | |||
| CN101585515A | 2009-11-25 | |||
| CN1569619A | 2005-01-26 | |||
| CN103113881A | 2013-05-22 |
Attorney, Agent or Firm:
SHANGHAI KESHENG INTELLECTUAL PROPERTY AGENCY LTD. (CN)
上海科盛知识产权代理有限公司 (CN)
上海科盛知识产权代理有限公司 (CN)
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