Title:
METHOD FOR PREPARING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2022/179058
Kind Code:
A1
Abstract:
Provided are a method for preparing a semiconductor structure and a semiconductor structure. The method for preparing the semiconductor structure comprises the following steps: providing a substrate, a functional structure layer being formed on a surface of the substrate, and particles being provided on a surface of the functional structure layer; forming a first dielectric layer on the surface of the substrate, the first dielectric layer covering the functional structure layer; grinding to remove part of the first dielectric layer until the particles are exposed, and removing the particles to form a first recess on a surface of the remaining first dielectric layer; and forming a second dielectric layer on the surface of the first dielectric layer, the second dielectric layer filling the first recess.
Inventors:
CHU ZHUGEN (CN)
Application Number:
PCT/CN2021/111882
Publication Date:
September 01, 2022
Filing Date:
August 10, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/762
Foreign References:
| CN113035769A | 2021-06-25 | |||
| US20160064241A1 | 2016-03-03 | |||
| US6077784A | 2000-06-20 | |||
| CN104112699A | 2014-10-22 | |||
| US6828226B1 | 2004-12-07 | |||
| US6855617B1 | 2005-02-15 |
Attorney, Agent or Firm:
BEIJING INTELLEGAL INTELLECTUAL PROPERTY AGENT LTD. (CN)
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