Title:
METHOD FOR PREPARING SILICON FILM
Document Type and Number:
WIPO Patent Application WO/2014/048213
Kind Code:
A1
Abstract:
The present invention relates to a method for preparing a silicon film, which comprises the following steps of: a passivation layer formation step of respectively depositing a passivation layer on the front and back sides of a silicon slice; a seed layer formation step of depositing polycrystalline silicon on the front passivation layer as an epitaxial seed layer; an epitaxial layer formation step of epitaxially growing the polycrystalline silicon on the above-mentioned seed layer to form an epitaxial layer; and a corrosion step of forming a corrosion window on the back passivation layer and starting corroding the back side of the silicon slice through the corrosion window using a corrosive liquid until stopping at the front passivation layer mentioned above. A silicon film with a consistent homogeneity within the slice and an accurately controllable thickness can be prepared by using the present invention.
Inventors:
JING ERRONG (CN)
ZHOU GUOPING (CN)
XIA CHANGFENG (CN)
ZHOU GUOPING (CN)
XIA CHANGFENG (CN)
Application Number:
PCT/CN2013/082546
Publication Date:
April 03, 2014
Filing Date:
August 29, 2013
Export Citation:
Assignee:
CSMC TECHNOLOGIES FAB1 CO LTD (CN)
International Classes:
B81C1/00
Foreign References:
| CN101274738A | 2008-10-01 | |||
| CN101819923A | 2010-09-01 | |||
| US20030196593A1 | 2003-10-23 | |||
| US20070298581A1 | 2007-12-27 |
Attorney, Agent or Firm:
ADVANCE CHINA I.P.LAW OFFICE (CN)
广州华进联合专利商标代理有限公司 (CN)
广州华进联合专利商标代理有限公司 (CN)
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