Title:
METHOD FOR PREPARING SINGLE CRYSTAL OXIDE THIN FILM
Document Type and Number:
WIPO Patent Application WO/2002/018678
Kind Code:
A1
Abstract:
A tri-phase epitaxial method for preparing a single crystal oxide thin film, particularly a high-temperature superconductor thin film of (Y, Nd, or Pr) Ba¿2? Cu¿3? O¿7? type being usable as a superconductive device, which comprises a step of depositing an oxide thin film having the same composition as that of an oxide for forming the single crystal on a substrate as a seed layer, a step of depositing on the seed layer a thin film comprising a substance capable of being molten into a liquid by heating the substrate and of melting the oxide for forming the single crystal, a step of heating the substrate to form a liquid layer, and a step of depositing, via the liquid layer, the oxide for forming the single crystal on the seed layer, to thereby form the single crystal oxide thin film through vapor phase deposition, wherein the partial pressure of oxygen over the liquid phase in the step of forming the single crystal oxide thin film through vapor phase deposition is 1.0 to 760 Torr.
Inventors:
KOINUMA HIDEOMI (JP)
KAWASAKI MASASHI (JP)
MATSUMOTO YUJI (JP)
KAWASAKI MASASHI (JP)
MATSUMOTO YUJI (JP)
Application Number:
PCT/JP2001/007582
Publication Date:
March 07, 2002
Filing Date:
August 31, 2001
Export Citation:
Assignee:
JAPAN SCIENCE & TECH CORP (JP)
KOINUMA HIDEOMI (JP)
KAWASAKI MASASHI (JP)
MATSUMOTO YUJI (JP)
KOINUMA HIDEOMI (JP)
KAWASAKI MASASHI (JP)
MATSUMOTO YUJI (JP)
International Classes:
C30B19/04; C30B23/02; C30B29/22; C30B25/02; H01L39/24; (IPC1-7): C30B23/02; C30B29/22
Foreign References:
| JPH02175613A | 1990-07-06 | |||
| JPH07101796A | 1995-04-18 | |||
| US5885939A | 1999-03-23 |
Other References:
See also references of EP 1314800A4
Attorney, Agent or Firm:
Nishi, Yoshiyuki (26-32 Nakahara 4-chom, Isogo-ku Yokohama-shi Kanagawa, JP)
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