Title:
METHOD FOR PROCESSING LAMINATED ELECTRODE
Document Type and Number:
WIPO Patent Application WO/2011/071028
Kind Code:
A1
Abstract:
Either at least one halogen gas selected from the group comprising CF4, C2F6, C3F6, C3F8, C4F6, C4F8, C5F8, Cl2, BCl3, SiCl4, HBr, and HI, or a mixed gas of the halogen gas and at least one inert gas selected from the group comprising N2, Ne, Ar, and Xe is used as an etching gas in a process for etching the upper electrode film layer (Eu) of a bottom electrode (E) and a process for etching the bottom electrode film layer (Eb) of the same. A gas comprising at least an oxygen gas is used as an etching gas in a process for etching the middle electrode film layer (Em) of the same.
Inventors:
TOJO ISSEI (JP)
YAMAMOTO TADASHI (JP)
OHNO HIDEO (JP)
IKEDA SHOJI (JP)
YAMAMOTO TADASHI (JP)
OHNO HIDEO (JP)
IKEDA SHOJI (JP)
Application Number:
PCT/JP2010/071861
Publication Date:
June 16, 2011
Filing Date:
December 07, 2010
Export Citation:
Assignee:
ULVAC INC (JP)
UNIV TOHOKU (JP)
TOJO ISSEI (JP)
YAMAMOTO TADASHI (JP)
OHNO HIDEO (JP)
IKEDA SHOJI (JP)
UNIV TOHOKU (JP)
TOJO ISSEI (JP)
YAMAMOTO TADASHI (JP)
OHNO HIDEO (JP)
IKEDA SHOJI (JP)
International Classes:
H01L21/3065; H01L21/8246; H01L27/105; H01L43/12
Domestic Patent References:
WO2009096328A1 | 2009-08-06 |
Foreign References:
JP2008227499A | 2008-09-25 | |||
JP2004349687A | 2004-12-09 |
Attorney, Agent or Firm:
ONDA, Hironori et al. (JP)
Hironori Onda (JP)
Hironori Onda (JP)
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