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Patent Searching and Data


Title:
METHOD FOR PROCESSING LAMINATED ELECTRODE
Document Type and Number:
WIPO Patent Application WO/2011/071028
Kind Code:
A1
Abstract:
Either at least one halogen gas selected from the group comprising CF4, C2F6, C3F6, C3F8, C4F6, C4F8, C5F8, Cl2, BCl3, SiCl4, HBr, and HI, or a mixed gas of the halogen gas and at least one inert gas selected from the group comprising N2­­, Ne, Ar, and Xe is used as an etching gas in a process for etching the upper electrode film layer (Eu) of a bottom electrode (E) and a process for etching the bottom electrode film layer (Eb) of the same. A gas comprising at least an oxygen gas is used as an etching gas in a process for etching the middle electrode film layer (Em) of the same.

Inventors:
TOJO ISSEI (JP)
YAMAMOTO TADASHI (JP)
OHNO HIDEO (JP)
IKEDA SHOJI (JP)
Application Number:
PCT/JP2010/071861
Publication Date:
June 16, 2011
Filing Date:
December 07, 2010
Export Citation:
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Assignee:
ULVAC INC (JP)
UNIV TOHOKU (JP)
TOJO ISSEI (JP)
YAMAMOTO TADASHI (JP)
OHNO HIDEO (JP)
IKEDA SHOJI (JP)
International Classes:
H01L21/3065; H01L21/8246; H01L27/105; H01L43/12
Domestic Patent References:
WO2009096328A12009-08-06
Foreign References:
JP2008227499A2008-09-25
JP2004349687A2004-12-09
Attorney, Agent or Firm:
ONDA, Hironori et al. (JP)
Hironori Onda (JP)
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