Title:
METHOD FOR PROCESSING MEMBER TO BE PROCESSED
Document Type and Number:
WIPO Patent Application WO/2018/008640
Kind Code:
A1
Abstract:
A method MT according to an embodiment provides a technique which enables pattern shape control during processing of an organic film and the like. A wafer W to which the method MT according to the embodiment is to be applied is provided with a layer to be etched EL, an organic film OL, and a mask ALM. The organic film OL is configured from a first area VL1 and a second area VL2. The mask ALM is disposed on the first area VL1. The first area VL1 is disposed on the second area VL2. The second area VL2 is disposed on the layer to be etched EL. The method MT comprises: generating a plasma of a gas including nitrogen gas in a processing container 12 in which the wafer W is contained, and etching the first area VL1 until the second area VL2 is reached; forming a mask OLM1 from the first area VL1; forming a protection film SX on a side surface SF of the mask OLM1 in a conformal manner; and etching the second area VL2 until the layer to be etched EL is reached to form a mask OLM2 from the second area VL2.
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Inventors:
MORIKITA SHINYA (JP)
BANSE TAKANORI (JP)
SEYA YUTA (JP)
NIITSUMA RYOSUKE (US)
BANSE TAKANORI (JP)
SEYA YUTA (JP)
NIITSUMA RYOSUKE (US)
Application Number:
PCT/JP2017/024508
Publication Date:
January 11, 2018
Filing Date:
July 04, 2017
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065; H05H1/46
Foreign References:
| JP2008078617A | 2008-04-03 | |||
| JPS62291940A | 1987-12-18 | |||
| JP2009016815A | 2009-01-22 | |||
| JP2015111607A | 2015-06-18 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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