METHOD FOR PROCESSING OF SEMICONDUCTOR CRYSTAL BODY, AND DEVICE FOR PROCESSING OF SEMICONDUCTOR CRYSTAL BODY

WIPO Patent Application WO/2011/089971

A1

Disclosed is a method for processing of semiconductor crystal bodies that facilitates processing at lower temperatures than previously possible. The method comprises the steps of preparing a semiconductor crystal body (1); clamping the semiconductor crystal body (1) with a pair of pressure applying work tools (2, 3) (an upper punch 2, a lower punch 3) that are made from a material that is primarily a conductive material; heating the semiconductor crystal body by self-heating, by applying electrical pulses between the pair of pressure applying work tools, to a target temperature greater than or equal to a temperature whereat the semiconductor crystal body may be plastically deformed by applying pressure, and which is below the melting point of the semiconductor crystal body; and applying pressure between the pair of pressure applying work tools (2, 3), forming the semiconductor crystal body into a target shape by plastically deforming the semiconductor crystal body while maintaining the target temperature of the semiconductor crystal body by continuously applying electrical pulses between the pair of pressure applying work tools (2, 3).

HORIUCHI HIDEYA (JP)
HACHINOHE SATORU (JP)
KOSHINO JUNICHI (JP)

PCT/JP2011/050492

July 28, 2011

January 14, 2011

Click for automatic bibliography generation  

MURATA MANUFACTURING CO (JP)
HORIUCHI HIDEYA (JP)
HACHINOHE SATORU (JP)
KOSHINO JUNICHI (JP)

H01L21/02

JP2004221464A	2004-08-05
JP2006237460A	2006-09-07
JP2000049392A	2000-02-18
JPH11261119A	1999-09-24
JP2005142370A	2005-06-02

View/Download PDF      PDF Help

Previous Patent: COATING COMPOSITION AND SILICON RESIN COMPOSITION

Next Patent: IMAGE PROCESSING DEVICE AND METHOD