Title:
METHOD FOR PROCESSING SOI SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2004/010504
Kind Code:
A1
Abstract:
A method for processing an SOI substrate that has a back surface layer composed of a semiconductor substrate, an insulating layer disposed on the upper surface of the back surface layer, a semiconductor thin film layer disposed on the upper surface of the insulating layer and a circuit formed on the surface of the semiconductor thin film layer, having a grinding step in which the back surface layer is ground to a predetermined thickness and an etching step in which the ground back surface layer of a predetermined thickness is removed by chemical etching so that the insulating layer is exposed.
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Inventors:
Takahashi, Toshiaki c/o DISCO CORPORATION (14-3 Higashi Kojiya 2-chom, Ota-ku Tokyo, 144-8650, JP)
Arai, Kazuhisa c/o DISCO CORPORATION (14-3 Higashi Kojiya 2-chom, Ota-ku Tokyo, 144-8650, JP)
Arai, Kazuhisa c/o DISCO CORPORATION (14-3 Higashi Kojiya 2-chom, Ota-ku Tokyo, 144-8650, JP)
Application Number:
PCT/JP2003/008895
Publication Date:
January 29, 2004
Filing Date:
July 14, 2003
Export Citation:
Assignee:
DISCO CORPORATION (14-3, Higashi Kojiya 2-chome Ota-ku, Tokyo, 144-8650, JP)
Takahashi, Toshiaki c/o DISCO CORPORATION (14-3 Higashi Kojiya 2-chom, Ota-ku Tokyo, 144-8650, JP)
Arai, Kazuhisa c/o DISCO CORPORATION (14-3 Higashi Kojiya 2-chom, Ota-ku Tokyo, 144-8650, JP)
Takahashi, Toshiaki c/o DISCO CORPORATION (14-3 Higashi Kojiya 2-chom, Ota-ku Tokyo, 144-8650, JP)
Arai, Kazuhisa c/o DISCO CORPORATION (14-3 Higashi Kojiya 2-chom, Ota-ku Tokyo, 144-8650, JP)
International Classes:
H01L27/12; B24B7/22; H01L21/00; H01L21/02; H01L21/306; H01L21/76; H01L21/762; (IPC1-7): H01L27/12
Attorney, Agent or Firm:
Ono, Hisazumi (Nippon Shuzo bldg, 1-21 Nishi-Shimbashi 1-chom, Minato-ku Tokyo, 105-0003, JP)
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