Title:
METHOD FOR PROCESSING SUBSTRATE AND APPARATUS FOR PROCESSING SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2005/109476
Kind Code:
A1
Abstract:
It is aimed to improve the etching resistance of a resist pattern prepared for dealing with exposure light sources of short wavelengths. Specifically, after forming a resist pattern by exposing and developing a resist film on a substrate, a treatment is conducted by supplying a fluorine-containing liquid onto the surface of the resist pattern. A foundation film is then etched using the thus-treated resist pattern as a mask. By being subjected to such a treatment, the density of fluorine molecules is increased in the surface of the resist pattern, thereby improving the etching resistance of the resist pattern.
Inventors:
IWASHITA MITSUAKI (JP)
SHIMURA SATORU (JP)
TANOUCHI KEIJI (JP)
SHIMURA SATORU (JP)
TANOUCHI KEIJI (JP)
Application Number:
PCT/JP2005/008128
Publication Date:
November 17, 2005
Filing Date:
April 28, 2005
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
IWASHITA MITSUAKI (JP)
SHIMURA SATORU (JP)
TANOUCHI KEIJI (JP)
IWASHITA MITSUAKI (JP)
SHIMURA SATORU (JP)
TANOUCHI KEIJI (JP)
International Classes:
G03F7/40; H01L21/00; H01L21/027; H01L21/3065; (IPC1-7): H01L21/027; G03F7/40; H01L21/3065
Foreign References:
| JPH07239558A | 1995-09-12 | |||
| JPH0831720A | 1996-02-02 | |||
| JP2004126080A | 2004-04-22 | |||
| JP2003255564A | 2003-09-10 | |||
| JP2003158072A | 2003-05-30 | |||
| JP2003133295A | 2003-05-09 |
Attorney, Agent or Firm:
Kanemoto, Tetsuo (Shinjuku Akebonobashi Building 1-12,
Sumiyoshi-cho, Shinjuku-k, Tokyo 65, JP)
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