Title:
METHOD FOR PRODUCING CHALCOGENIDE-BASED ATOMIC LAYER FILM
Document Type and Number:
WIPO Patent Application WO/2023/157968
Kind Code:
A1
Abstract:
This method for producing a chalcogenide-based atomic layer film involves: a base material forming step for forming a metal oxide single crystal base material having a metal oxide atomic layer; and a synthesizing step for generating a chalcogenide-based atomic layer by bringing the metal oxide single crystal base material into contact with a reducible chalcogen gas under a condition at a temperature lower than the melting point of the metal oxide single crystal base material to cause part or whole of the metal oxide atomic layer to undergo topotactic reaction.
Inventors:
YAMAKAWA HIROYUKI (JP)
HINATA SHINTARO (JP)
SHIMADA TOSHIHIRO (JP)
HINATA SHINTARO (JP)
SHIMADA TOSHIHIRO (JP)
Application Number:
PCT/JP2023/006033
Publication Date:
August 24, 2023
Filing Date:
February 20, 2023
Export Citation:
Assignee:
AISIN CORP (JP)
UNIV HOKKAIDO NAT UNIV CORP (JP)
UNIV HOKKAIDO NAT UNIV CORP (JP)
International Classes:
C30B29/46; C23C16/30; C23C16/56; C30B31/18; H01L21/365; H01L21/368
Domestic Patent References:
| WO2022005398A1 | 2022-01-06 |
Foreign References:
| US20160233322A1 | 2016-08-11 | |||
| JP2021161015A | 2021-10-11 | |||
| KR20180071643A | 2018-06-28 | |||
| JP2020094279A | 2020-06-18 | |||
| US20200357635A1 | 2020-11-12 |
Attorney, Agent or Firm:
PROSPEC PATENT FIRM (JP)
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