Title:
METHOD FOR PRODUCING EPITAXIAL SILICON WAFER
Document Type and Number:
WIPO Patent Application WO/2011/021578
Kind Code:
A1
Abstract:
Disclosed is a high-quality epitaxial silicon wafer which has good planarity and good film thickness uniformity. Specifically disclosed is a method for producing an epitaxial silicon wafer, which is characterized in that after the formation of an epitaxial film (20) on the surface of a silicon wafer (10) that has been subjected to mirror finish polishing, silicon deposits (21) adhered to the end portion of the back surface of the silicon wafer (10) during the formation of the epitaxial film (20) are removed by subjecting only the back surface of the silicon wafer (10) to a grinding process, a polishing process or a chemical etching process.
Inventors:
NAKAYOSHI YUICHI (JP)
NISHIMURA HIRONORI (JP)
NISHIMURA HIRONORI (JP)
Application Number:
PCT/JP2010/063729
Publication Date:
February 24, 2011
Filing Date:
August 06, 2010
Export Citation:
Assignee:
SUMCO CORP (JP)
NAKAYOSHI YUICHI (JP)
NISHIMURA HIRONORI (JP)
NAKAYOSHI YUICHI (JP)
NISHIMURA HIRONORI (JP)
International Classes:
H01L21/205; C23C16/56; H01L21/304; H01L21/306
Foreign References:
| JPH04122023A | 1992-04-22 | |||
| JP2005011848A | 2005-01-13 | |||
| JPH06232057A | 1994-08-19 | |||
| JPH06112173A | 1994-04-22 |
Attorney, Agent or Firm:
SUGIMURA, KENJI (JP)
Kenji Sugimura (JP)
Kenji Sugimura (JP)
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