Title:
METHOD FOR PRODUCING ERBIUM-DOPED BISMUTH OXIDE FILM
Document Type and Number:
WIPO Patent Application WO/2020/110839
Kind Code:
A1
Abstract:
An erbium-doped bismuth oxide which can exert the emission of highly intense light from an Er3+ ion is produced. Provided is a method for producing an erbium-doped bismuth oxide film, comprising the steps of: placing a first sputtering target containing a bismuth oxide, a second sputtering target containing an erbium oxide (Er2O3) and a substrate away from one another in a closed film formation chamber; setting the temperature of the substrate to room temperature, and then introducing a H2O gas into the film formation chamber at a specified pressure to feed the H2O gas in the vicinity of the substrate; sputtering the first sputtering target and the second sputtering target simultaneously so that a portion of the first sputtering target and a portion of the second sputtering target are deposited on the substrate, thereby forming a precursor film; and heating the precursor film at a specified temperature, thereby forming a crystal film.
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Inventors:
AKAZAWA HOSEI (JP)
Application Number:
PCT/JP2019/045317
Publication Date:
June 04, 2020
Filing Date:
November 19, 2019
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE (JP)
International Classes:
C23C14/08; C23C14/34; C23C14/58; H01S3/16
Domestic Patent References:
| WO2019244628A1 | 2019-12-26 |
Foreign References:
| JP2012077359A | 2012-04-19 | |||
| JP2018024779A | 2018-02-15 | |||
| JP2002068779A | 2002-03-08 | |||
| JP2014173122A | 2014-09-22 | |||
| JPH0677578A | 1994-03-18 |
Other References:
KONDO, YUKI ET AL.: "Emission and gain characteristics of Er- doped bismuthate channel waveguide", LECTURE PROCEEDINGS 1 OF THE 2004 ELECTRONICS SOCIETY CONFERENCE OF IEICE, 8 September 2004 (2004-09-08), pages 138, XP055711525, ISSN: 1349-1423
Attorney, Agent or Firm:
TANI & ABE, P.C. (JP)
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