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Title:
METHOD FOR PRODUCING GALLIUM NITRIDE LAMINATE
Document Type and Number:
WIPO Patent Application WO/2018/047844
Kind Code:
A1
Abstract:
[Problem] To provide a novel improved method for producing a gallium nitride laminate, the method being capable of preparing a single-crystal layer with less crystal defects. [Solution] In order to solve the problem, according to an aspect of the present invention, provided is a method for producing a gallium nitride laminate, the method comprising: an intermediate layer-forming step for forming, on a substrate (11), an intermediate layer (12) of gallium nitride having a random crystal orientation; and a single-crystal layer-forming step for forming a single-crystal layer (13) of gallium nitride on the intermediate layer (12) by a liquid-phase epitaxial growth method. The intermediate layer (12) may also be formed by the liquid-phase epitaxial growth method.

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Inventors:
WATANABE MAKOTO (JP)
AKIYAMA SHINYA (JP)
Application Number:
PCT/JP2017/032040
Publication Date:
March 15, 2018
Filing Date:
September 06, 2017
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Assignee:
DEXERIALS CORP (JP)
International Classes:
C30B29/38; C30B19/04; H01L21/208
Domestic Patent References:
WO2015033975A12015-03-12
Foreign References:
JP2009184847A2009-08-20
Attorney, Agent or Firm:
KAMEYA, Yoshiaki et al. (JP)
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