Title:
METHOD FOR PRODUCING GALLIUM OXIDE SEMICONDUCTOR FILM AND FILM FORMATION DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/009524
Kind Code:
A1
Abstract:
The present invention provides a method for producing a gallium oxide semiconductor film by mist CVD, said method comprising: a mist generating step for atomizing a source solution containing gallium in an atomizer unit to generate mist; a carrier gas supplying step for supplying, to the atomizer unit, a carrier gas for carrying the mist; a carrying step for carrying the mist by the carrier gas from the atomizer unit to a film formation chamber through a supply pipe connecting the atomizer unit with the film formation chamber; a flow-adjusting step for adjusting the flow of the mist and the carrier gas, which are supplied to the surface of a substrate in the film formation chamber, so that the flow goes along the surface of the substrate; a film-forming step for heat-treating the flow-adjusted mist to form a film on the substrate; and a discharging step for discharging waste gas upward from the substrate. Thus, provided is a method for producing a gallium oxide semiconductor film which has excellent in-plane evenness of the film thickness and excellent film formation speed.
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Inventors:
WATABE TAKENORI (JP)
Application Number:
PCT/JP2021/018526
Publication Date:
January 13, 2022
Filing Date:
May 17, 2021
Export Citation:
Assignee:
SHINETSU CHEMICAL CO (JP)
International Classes:
C23C16/40; C30B25/02; C23C16/455; C30B29/16; H01L21/365; H01L21/368
Domestic Patent References:
| WO2020026823A1 | 2020-02-06 |
Foreign References:
| JP2013028480A | 2013-02-07 | |||
| JP2016157879A | 2016-09-01 | |||
| JPH0257337A | 1990-02-27 | |||
| JP2005307238A | 2005-11-04 | |||
| JP2012046772A | 2012-03-08 | |||
| JP5397794B1 | 2014-01-22 | |||
| JP2014063973A | 2014-04-10 | |||
| JP2020002396A | 2020-01-09 |
Attorney, Agent or Firm:
YOSHIMIYA Mikio et al. (JP)
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