Title:
METHOD FOR PRODUCING GAS BARRIER FILM
Document Type and Number:
WIPO Patent Application WO/2017/090498
Kind Code:
A1
Abstract:
The present invention provides a method for producing a gas barrier film, said method comprising: a step 1 in which a first layer containing a non-transition metal (M1) is formed on a substrate using the non-transition metal (M1) or a compound containing the non-transition metal (M1); a step 2 in which a second layer containing a transition metal (M2) is formed on the first layer, in such a manner as to be in contact with the first layer, using the transition metal (M2) or a compound containing the transition metal (M2) by means of physical vapor deposition; and a step 3 in which a third layer containing the transition metal (M2) is formed on the second layer, in such a manner as to be in contact with the second layer, using the transition metal (M2) or a compound containing the transition metal (M2) by means of physical vapor deposition. In step 2 and step 3, if the deposition rate at which the second layer is formed is denoted as DR2 (nm/second) and the deposition rate at which the third layer is formed is denoted as DR3 (nm/second), the ratio R of DR2 (nm/second) to DR3 (nm/second) satisfies formula 1. Formula 1: 0.2 ≤ R < 0.9
Inventors:
SAKKA KENJI (JP)
KAWAMURA TOMONORI (JP)
KAWAMURA TOMONORI (JP)
Application Number:
PCT/JP2016/083998
Publication Date:
June 01, 2017
Filing Date:
November 16, 2016
Export Citation:
Assignee:
KONICA MINOLTA INC (JP)
International Classes:
C23C14/34; B05D7/24; B32B9/00
Domestic Patent References:
| WO2012157706A1 | 2012-11-22 | |||
| WO2011077738A1 | 2011-06-30 |
Foreign References:
| JP2009220342A | 2009-10-01 | |||
| JPH111769A | 1999-01-06 | |||
| JP2009196155A | 2009-09-03 | |||
| JP2015147952A | 2015-08-20 | |||
| JP2008231532A | 2008-10-02 | |||
| JP2003202405A | 2003-07-18 | |||
| JP2012061683A | 2012-03-29 |
Attorney, Agent or Firm:
HATTA & ASSOCIATES (JP)
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