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Title:
METHOD FOR PRODUCING GROUP 3-5 NITRIDE SEMICONDUCTOR AND METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE
Document Type and Number:
WIPO Patent Application WO2007037504
Kind Code:
A9
Abstract:
Disclosed are a method for producing a group 3-5 nitride semiconductor and a method for manufacturing a light-emitting device. The method for producing a group 3-5 nitride semiconductor comprises the steps (i), (ii) and (iii) described below in this order. The method for manufacturing a light-emitting device comprises the steps (i), (ii), (iii) and (iv) described below in this order. The steps are (i) a step for arranging inorganic particles on a substrate; (ii) a step for growing a semiconductor layer; (iii) a step for separating the semiconductor layer from the substrate by irradiating light between the substrate and the semiconductor layer; and (iv) a step for forming an electrode.

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Inventors:
YAMANAKA SADANORI (JP)
UEDA KAZUMASA (JP)
TSUCHIDA YOSHIHIKO (JP)
Application Number:
PCT/JP2006/319822
Publication Date:
May 24, 2007
Filing Date:
September 27, 2006
Export Citation:
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Assignee:
SUMITOMO CHEMICAL CO (JP)
YAMANAKA SADANORI (JP)
UEDA KAZUMASA (JP)
TSUCHIDA YOSHIHIKO (JP)
International Classes:
C23C16/34; H01L21/20; H01L21/205; H01L33/00
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