Title:
METHOD FOR PRODUCING GROUP 3-5 COMPOUND SEMICONDUCTOR
Document Type and Number:
WIPO Patent Application WO/2008/093759
Kind Code:
A1
Abstract:
Disclosed is a method for producing a group 3-5 compound semiconductor, which
comprises a step wherein a group 3 raw material, a group 5 raw material, a carrier
gas, and if necessary other raw materials are supplied into a furnace for growing
a group 3-5 compound semiconductor on a substrate within the furnace by metal-organic
vapor deposition. This method is characterized in that the group 3 raw material
and the group 5 raw material are supplied into the furnace separately, and hydrogen
halide is supplied into the furnace together with a carrier gas or a raw material
other than the group 5 raw material.
More Like This:
| JP3161007 | INP SINGLE CRYSTAL SPECULAR WAFER AND ITS PRODUCTION |
| JP08188498 | EPITAXIAL WAFER AND ITS PRODUCTION |
| WO/2004/027126 | SEMICONDUCTOR CRYSTAL OF GROUP III-V COMPOUND |
Inventors:
TSUCHIDA, Yoshihiko (2-14-31, Umezono Tsukuba-sh, Ibaraki 45, 3050045, JP)
土田良彦 (〒45 茨城県つくば市梅園２－１４－３１ Ibaraki, 3050045, JP)
土田良彦 (〒45 茨城県つくば市梅園２－１４－３１ Ibaraki, 3050045, JP)
Application Number:
JP2008/051465
Publication Date:
August 07, 2008
Filing Date:
January 24, 2008
Export Citation:
Assignee:
SUMITOMO CHEMICAL COMPANY, LIMITED (27-1, Shinkawa 2-chome Chuo-k, Tokyo 60, 1048260, JP)
住友化学株式会社 (〒60 東京都中央区新川二丁目２７番１号 Tokyo, 1048260, JP)
TSUCHIDA, Yoshihiko (2-14-31, Umezono Tsukuba-sh, Ibaraki 45, 3050045, JP)
住友化学株式会社 (〒60 東京都中央区新川二丁目２７番１号 Tokyo, 1048260, JP)
TSUCHIDA, Yoshihiko (2-14-31, Umezono Tsukuba-sh, Ibaraki 45, 3050045, JP)
International Classes:
C30B29/40; C23C16/34; C30B29/38; H01L21/205; H01L33/00; C30B29/10; C23C16/34; H01L21/02; H01L33/00
Attorney, Agent or Firm:
NAKAYAMA, Tohru et al. (Limited 5-33, Kitahama 4-chome, Chuo-ku, Osaka-sh, Osaka 50, 5418550, JP)
Download PDF: