Title:
METHOD FOR PRODUCING GROUP III-V COMPOUND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/224966
Kind Code:
A1
Abstract:
Provided is a method for producing a group III-V compound semiconductor device (100), the method comprising: a first step in which a group V source gas (250d) and an impurity source gas (250e) are supplied to a reactor (220) which is set to a first temperature (T1), and impurities are added to an undoped group III-V compound semiconductor layer; and a second step in which the supply of the impurity source gas (250e) is stopped, the temperature of the reactor (220) is raised to a second temperature (T2) higher than the first temperature (T1), and the supply of the group V source gas (250d) is continued.
Inventors:
NAKAI EIJI (JP)
Application Number:
PCT/JP2018/019923
Publication Date:
November 28, 2019
Filing Date:
May 24, 2018
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L21/223; H01L21/22; H01S5/042; H01S5/343
Foreign References:
| JPH06310449A | 1994-11-04 | |||
| JPH02241030A | 1990-09-25 | |||
| JPS5577131A | 1980-06-10 | |||
| JP2008010807A | 2008-01-17 | |||
| JPH05175150A | 1993-07-13 |
Attorney, Agent or Firm:
OIWA Masuo et al. (JP)
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