METHOD FOR PRODUCING HYBRID SUBSTRATES, AND HYBRID SUBSTRATE

WIPO Patent Application WO/2014/017369

A1

A method for producing hybrid substrates which can be incorporated into a semiconductor production line involves: forming an ion-injection region (3) by injecting ions from the surface of a silicon substrate (1); adhering the ion-injection surface of the silicon substrate and the surface of a sapphire substrate (4) to one another directly or with an insulating film (2) interposed therebetween; and then obtaining a hybrid substrate (8) having a silicon thin-film (semiconductor layer; 6) on the sapphire substrate (4), by detaching the silicon substrate (1) in the ion-injection region (3). This method is characterized in that the adhering to the silicon substrate (1) occurs after the sapphire substrate (4) is heat-treated in advance in a reducing atmosphere.

WO/2005/076340	MULTI-GATE TRANSISTOR FORMED WITH ACTIVE PATTERNS OF UNIFORM CRITICAL DIMENSION AND FABRICATING METHOD THEREFOR
JPH05267343	MANUFACTURE OF THIN-FILM TRANSISTOR
JPS5837993	[Title of the Invention] Sapphire top silicon semiconductor device

KONISHI SHIGERU (JP)
KUBOTA YOSHIHIRO (JP)

PCT/JP2013/069487

January 30, 2014

July 18, 2013

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SHINETSU CHEMICAL CO (JP)

H01L27/12; H01L21/02

WO2010137587A1	2010-12-02
WO2011077608A1	2011-06-30

JP2005019872A	2005-01-20
JP2010278337A	2010-12-09
JP2004111848A	2004-04-08

YOSHII ET AL., JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 21, no. 21-1, 1982, pages 175 - 179

KOJIMA Takashi et al. (JP)
Takashi Kojima (JP)

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