Title:
METHOD FOR PRODUCING LIGHT-EMITTING DIODE
Document Type and Number:
WIPO Patent Application WO/2018/135689
Kind Code:
A1
Abstract:
The present invention provides a method for producing a light-emitting diode. The method for producing a light-emitting diode according to an embodiment of the present invention comprises: a step of forming a mask layer, including at least one window region and at least one protruding region, on a growth substrate; a step of forming gallium nitride (GaN), comprising N-polar gallium nitride and Ga-polar gallium nitride, on the growth substrate by subjecting gallium nitride to epitaxial lateral overgrowth (ELOG); a step of selectively etching the N-polar gallium nitride; and a step of removing the mask layer, wherein the protruding region of the mask layer has a positive-type protruding pattern.
More Like This:
Inventors:
KIM CHIN KYO (KR)
JANG DONG SOO (KR)
JUE MI YEON (KR)
KIM HWA SEOB (KR)
KIM DONG HOI (KR)
JANG DONG SOO (KR)
JUE MI YEON (KR)
KIM HWA SEOB (KR)
KIM DONG HOI (KR)
Application Number:
PCT/KR2017/001442
Publication Date:
July 26, 2018
Filing Date:
February 10, 2017
Export Citation:
Assignee:
UNIV INDUSTRY COOPERATION GROUP KYUNG HEE UNIV (KR)
International Classes:
H01L33/00; H01L21/306; H01L33/04
Domestic Patent References:
WO2013157875A1 | 2013-10-24 |
Foreign References:
US20080070334A1 | 2008-03-20 | |||
KR101383161B1 | 2014-04-14 | |||
KR20160047387A | 2016-05-02 | |||
KR101128612B1 | 2012-03-26 |
Attorney, Agent or Firm:
KIM, Youn Gwon (KR)
Download PDF:
Previous Patent: METHOD FOR PRODUCING GALLIUM NITRIDE SUBSTRATE
Next Patent: METHOD FOR PRODUCING LIGHT-EMITTING DIODE
Next Patent: METHOD FOR PRODUCING LIGHT-EMITTING DIODE