Title:
METHOD FOR PRODUCING MULTILAYER BODY AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/199181
Kind Code:
A1
Abstract:
The present invention provides a semiconductor device which enables miniaturization and high integration. According to the present invention, an oxide semiconductor, a first conductor, a first insulator, a second insulator, an inorganic film, a first coating film, a second coating film and a resist mask are sequentially formed on a substrate in this order; the second coating film is processed by means of a dry etching method, thereby forming an island-like second coating film; the first coating film is processed by means of a dry etching method using the island-like second coating film as a mask, thereby forming an island-like first coating film and removing the resist mask; the inorganic film, the second insulator, the first insulator and the first conductor are sequentially processed in this order by means of a dry etching method using the island-like first coating film as a mask, thereby forming an island-like inorganic film, an island-like second insulator, an island-like first insulator and an island-like first conductor and removing the island-like second coating film; the oxide semiconductor is processed by means of a dry etching method using the island-like inorganic film as a mask, thereby forming an island-like oxide semiconductor and removing the island-like first coating film; and the island-like inorganic film is removed by means of a dry etching method. Meanwhile, the first insulator is a nitride, and the second insulator is an oxide.
Inventors:
HODO RYOTA (JP)
ENDO TOSHIYA (JP)
NAKANO MASARU (JP)
YAMAZAKI SHUNPEI (JP)
ENDO TOSHIYA (JP)
NAKANO MASARU (JP)
YAMAZAKI SHUNPEI (JP)
Application Number:
PCT/IB2023/053509
Publication Date:
October 19, 2023
Filing Date:
April 06, 2023
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; H01L21/28; H01L21/3205; H01L21/336; H01L21/768; H01L21/822; H01L21/8234; H01L23/522; H01L27/04; H01L27/06; H01L27/088; H01L29/417; H10B12/00; H10B41/70; H10B99/00
Domestic Patent References:
| WO2021070007A1 | 2021-04-15 | |||
| WO2020250083A1 | 2020-12-17 | |||
| WO2020229914A1 | 2020-11-19 |
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