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Patent Searching and Data


Title:
METHOD FOR PRODUCING NANOCRYSTALS AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/135145
Kind Code:
A1
Abstract:
Provided is a method for producing nanocrystals that makes it possible to easily form nanocrystals containing at least an oxide and/or a hydroxide. The method for producing nanocrystals is provided with a light irradiation step in which the surface of a metal member 100 immersed in water 2 is irradiated with light L, and nanocrystals are formed on the surface of the metal member 100. The metal member 100 comprises a first member containing a first metal and a second member containing a second metal. The standard electrode potential of the first metal is higher than -2.00 V, the standard electrode potential of the second metal is higher than -2.00 V, and the first member and the second member are electrically connected. The nanocrystals contain at least an oxide and/or a hydroxide. The oxide is an oxide of at least one of the first metal and the second metal. The hydroxide is a hydroxide of at least one of the first metal and the second metal.

Inventors:
ADACHI SHUICHIRO (JP)
KITAGAWA MASAKI (JP)
WATANABE SEIICHI (JP)
JEEM MELBERT (JP)
NISHINO FUMIKA (JP)
TAKAHASHI YUKI (JP)
Application Number:
PCT/JP2017/042884
Publication Date:
July 26, 2018
Filing Date:
November 29, 2017
Export Citation:
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Assignee:
HITACHI CHEMICAL CO LTD (JP)
UNIV HOKKAIDO NAT UNIV CORP (JP)
International Classes:
C01G3/02; C23C22/73; C01G9/02; C01G23/04; C01G41/02; C01G53/04; C23C22/05; C23C22/78
Foreign References:
JP2014145105A2014-08-14
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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