Title:
METHOD FOR PRODUCING NANOCRYSTALS AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/135145
Kind Code:
A1
Abstract:
Provided is a method for producing nanocrystals that makes it possible to easily form nanocrystals containing at least an oxide and/or a hydroxide. The method for producing nanocrystals is provided with a light irradiation step in which the surface of a metal member 100 immersed in water 2 is irradiated with light L, and nanocrystals are formed on the surface of the metal member 100. The metal member 100 comprises a first member containing a first metal and a second member containing a second metal. The standard electrode potential of the first metal is higher than -2.00 V, the standard electrode potential of the second metal is higher than -2.00 V, and the first member and the second member are electrically connected. The nanocrystals contain at least an oxide and/or a hydroxide. The oxide is an oxide of at least one of the first metal and the second metal. The hydroxide is a hydroxide of at least one of the first metal and the second metal.
Inventors:
ADACHI SHUICHIRO (JP)
KITAGAWA MASAKI (JP)
WATANABE SEIICHI (JP)
JEEM MELBERT (JP)
NISHINO FUMIKA (JP)
TAKAHASHI YUKI (JP)
KITAGAWA MASAKI (JP)
WATANABE SEIICHI (JP)
JEEM MELBERT (JP)
NISHINO FUMIKA (JP)
TAKAHASHI YUKI (JP)
Application Number:
PCT/JP2017/042884
Publication Date:
July 26, 2018
Filing Date:
November 29, 2017
Export Citation:
Assignee:
HITACHI CHEMICAL CO LTD (JP)
UNIV HOKKAIDO NAT UNIV CORP (JP)
UNIV HOKKAIDO NAT UNIV CORP (JP)
International Classes:
C01G3/02; C23C22/73; C01G9/02; C01G23/04; C01G41/02; C01G53/04; C23C22/05; C23C22/78
Foreign References:
JP2014145105A | 2014-08-14 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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