METHOD FOR PRODUCING NITRIDE COMPOUND SEMICONDUCTOR SUBSTRATE, AND NITRIDE COMPOUND SEMICONDUCTOR FREE-STANDING SUBSTRATE

WIPO Patent Application WO/2011/093481

A1

Disclosed is a technique which is capable of preventing occurrence of warping in a nitride compound semiconductor layer, and by which a nitride compound semiconductor layer having small variations in the in-plane off angle can be grown with good reproducibility. Specifically disclosed is a method for producing a nitride compound semiconductor substrate using an HVPE process, wherein a low-temperature protective layer is formed on a rare earth perovskite substrate at a first growth temperature (a first step), and a thick layer composed of a nitride compound semiconductor is formed on the low-temperature protective layer at a second growth temperature that is higher than the first growth temperature (a second step). In the first step, the supply amounts of HCl and NH3 are controlled so that the supply ratio of HCl to NH3, namely the supply ratio III/V is 0.016-0.13, and the low-temperature protective layer is formed to have a film thickness of 50-90 nm.

MORIOKA SATORU (JP)
TAKAKUSAKI MISAO (JP)
MIKAMI MAKOTO (JP)
SHIMIZU TAKAYUKI (JP)

PCT/JP2011/051855

August 04, 2011

January 31, 2011

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JX NIPPON MINING & METALS CORP (JP)
MORIOKA SATORU (JP)
TAKAKUSAKI MISAO (JP)
MIKAMI MAKOTO (JP)
SHIMIZU TAKAYUKI (JP)

C30B29/38; C23C16/34; H01L21/205

WO2008035632A1	2008-03-27
WO2008126532A1	2008-10-23

JP2005235805A

2005-09-02

AKIHIRO WAKAHARA ET AL.: "Hydride Vapor Phase Epitaxy of GaN on NdGa03 Substrate and Realization of Freestanding GaN Wafers with 2-inch Scale", JPN.J.APPL.PHYS., vol. 39, no. 4B, April 2000 (2000-04-01), pages 2399 - 2401

ARAFUNE, Hiroshi (JP)
Hiroshi Arafune (JP)

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