Title:
METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR AND NITRIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2008/023774
Kind Code:
A1
Abstract:
Disclosed is a method for producing a nitride semiconductor which enables to
improve the crystallinity and surface state of a nitride semiconductor crystal
formed on a high-temperature AlN buffer layer. Specifically disclosed is a method
for producing a nitride semiconductor wherein an AlN buffer layer is formed on
a substrate for growth and a nitride semiconductor crystal is grown thereon.
In this production method, the AlN buffer layer is crystal-grown at a high temperature
not less than 900˚C, while continuously supplying an Al raw material gas
for the AlN buffer layer into a reaction chamber in advance and then intermittently
supplying an N raw material gas thereinto.
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Inventors:
SHAKUDA, Yukio (21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto-sh, Kyoto 85, 6158585, JP)
Application Number:
JP2007/066389
Publication Date:
February 28, 2008
Filing Date:
August 23, 2007
Export Citation:
Assignee:
ROHM CO., LTD. (21 Saiin Mizosaki-cho, Ukyo-ku Kyoto-sh, Kyoto 85, 6158585, JP)
ローム株式会社 (〒85 京都府京都市右京区西院溝崎町２１番地 Kyoto, 6158585, JP)
ローム株式会社 (〒85 京都府京都市右京区西院溝崎町２１番地 Kyoto, 6158585, JP)
International Classes:
H01L21/205; C30B25/02; C30B29/38; H01L33/06; H01L33/12; H01L33/32
Attorney, Agent or Firm:
MIYOSHI, Hidekazu et al. (Toranomon Kotohira Tower, 2-8 Toranomon 1-chom, Minato-ku Tokyo 01, 1050001, JP)
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