Title:
METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR PHOTOELECTRODE
Document Type and Number:
WIPO Patent Application WO/2020/116151
Kind Code:
A1
Abstract:
Provided is a method for producing a nitride semiconductor photoelectrode capable of improving photoenergy conversion efficiency. This method for producing a nitride semiconductor photoelectrode comprises: a first step for forming an n-type gallium nitride layer 2 on an insulating or conducting substrate 1; a second step for forming an indium gallium nitride layer 3 on the n-type gallium nitride layer 2; a third step for forming a nickel layer 4 on the indium gallium nitride layer 3; and a fourth step for heat-treating the nickel layer 4 in an oxygen atmosphere.
Inventors:
UZUMAKI YUYA (JP)
SATO SAYUMI (JP)
ONO YOKO (JP)
KOMATSU TAKESHI (JP)
SATO SAYUMI (JP)
ONO YOKO (JP)
KOMATSU TAKESHI (JP)
Application Number:
PCT/JP2019/045259
Publication Date:
June 11, 2020
Filing Date:
November 19, 2019
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE (JP)
International Classes:
C23C14/06; C25B5/00; C23C16/34; C25B1/04; C25B11/04; C25B11/06
Foreign References:
| JP2017210666A | 2017-11-30 | |||
| JP2013115112A | 2013-06-10 | |||
| JP2010010591A | 2010-01-14 | |||
| JP2017017173A | 2017-01-19 | |||
| JP2015147190A | 2015-08-20 | |||
| JP2018204044A | 2018-12-27 |
Other References:
SEKIMOTO, TAKEYUKI ET AL.: "Analysis of products from photoelectrochemical reduction of 13C02 by GaN-Si based tandem photoelectrode", JOURNAL OF PHYSICAL CHEMISTRY C, vol. 120, 27 June 2016 (2016-06-27), pages 13970 - 13975, XP055715997
Attorney, Agent or Firm:
MIYOSHI Hidekazu et al. (JP)
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