Title:
METHOD FOR PRODUCING ORGANIC SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2010/095527
Kind Code:
A1
Abstract:
A semiconductor element to which acquired functions are imparted by setting/changing the functions of the semiconductor element after manufactured. The organic semiconductor element is provided with at least two electrodes arranged away from each other on a bipolar organic semiconductor layer, and a back gate disposed on the side opposite to the organic semiconductor layer with an insulating film sandwiched therebetween. At a first temperature at which a bias stress effect occurs, a gate voltage is applied to the organic semiconductor element to generate a positive charge or a negative charge in the organic semiconductor layer, so that the generated positive charge or the negative charge is trapped by the bias stress effect. While the gate voltage is applied, the organic semiconductor element is subjected to refrigeration to a temperature not higher than a second temperature at which the bias effect is frozen, so that the trapped positive charge or negative charge is fixed. The application of the gate voltage is removed to inject a charge opposite to the fixed positive charge or negative charge as a carrier into the organic semiconductor layer.
Inventors:
SUGAWARA TADASHI (JP)
ITO TAKURO (JP)
MATSUSHITA MICHIO (JP)
HIGUCHI HIROYUKI (JP)
ITO TAKURO (JP)
MATSUSHITA MICHIO (JP)
HIGUCHI HIROYUKI (JP)
Application Number:
PCT/JP2010/051708
Publication Date:
August 26, 2010
Filing Date:
February 05, 2010
Export Citation:
Assignee:
UNIV TOKYO (JP)
SUGAWARA TADASHI (JP)
ITO TAKURO (JP)
MATSUSHITA MICHIO (JP)
HIGUCHI HIROYUKI (JP)
SUGAWARA TADASHI (JP)
ITO TAKURO (JP)
MATSUSHITA MICHIO (JP)
HIGUCHI HIROYUKI (JP)
International Classes:
H01L51/05; H01L29/66; H01L29/786; H01L29/861
Foreign References:
| JP2006303423A | 2006-11-02 | |||
| JP2005210087A | 2005-08-04 | |||
| JP2006278638A | 2006-10-12 | |||
| JP2004103719A | 2004-04-02 | |||
| JP2004118132A | 2004-04-15 |
Other References:
TSE NGA NG ET AL.: "Gate bias stress due to polymer gate dielectrics in organic thin-film transistors", JOURNAL OF APPLIED PHYSICS, vol. 103, 2008, pages 044506
Attorney, Agent or Firm:
INABA, SHIGERU (JP)
Shigeru Inaba (JP)
Shigeru Inaba (JP)
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