Title:
METHOD FOR PRODUCING OXIDE SEMICONDUCTOR LAYER
Document Type and Number:
WIPO Patent Application WO/2012/105581
Kind Code:
A1
Abstract:
Provided is a method for producing an oxide semiconductor layer that is able to perform heating processing in a high temperature region, at which resin film substrates are altered and deform, with respect to an oxide semiconductor layer formed on a support body, even if a support body containing a resin film substrate is used. A traveling film substrate is sequentially subjected to coating by a coating film, drying/baking processing, calendering processing, and electromagnetic wave processing. In the electromagnetic wave processing in an electromagnetic wave irradiation unit, a metal oxide semiconductor porous layer formed on the film substrate is heated by means of electromagnetic wave irradiation, and the film substrate is cooled by a cooling roller.
Inventors:
KANEKO NAOTO (JP)
MIZUNO MIKIHISA (JP)
IWATA RYOSUKE (JP)
MOROZUMI TAKESHI (JP)
MIZUNO MIKIHISA (JP)
IWATA RYOSUKE (JP)
MOROZUMI TAKESHI (JP)
Application Number:
PCT/JP2012/052196
Publication Date:
August 09, 2012
Filing Date:
January 25, 2012
Export Citation:
Assignee:
SONY CORP (JP)
KANEKO NAOTO (JP)
MIZUNO MIKIHISA (JP)
IWATA RYOSUKE (JP)
MOROZUMI TAKESHI (JP)
KANEKO NAOTO (JP)
MIZUNO MIKIHISA (JP)
IWATA RYOSUKE (JP)
MOROZUMI TAKESHI (JP)
International Classes:
C01G23/04; H01M14/00
Foreign References:
| JP2005139498A | 2005-06-02 | |||
| JP2004196644A | 2004-07-15 | |||
| JP2004342319A | 2004-12-02 | |||
| JP2009174002A | 2009-08-06 | |||
| JP2009155704A | 2009-07-16 | |||
| JP2002121683A | 2002-04-26 |
Attorney, Agent or Firm:
SUGIURA, Masatomo et al. (JP)
Masatomo Sugiura (JP)
Masatomo Sugiura (JP)
Download PDF:
Claims:
Previous Patent: SOLID OXIDE FUEL CELL
Next Patent: COMPOSITION FOR OPTICAL MEMBERS AND OPTICAL MEMBER
Next Patent: COMPOSITION FOR OPTICAL MEMBERS AND OPTICAL MEMBER