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Patent Searching and Data


Title:
METHOD FOR PRODUCING PHOTOVOLTAIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/098368
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a method for producing a photovoltaic device that makes it possible to minimize decreases in open-circuit voltage and fill factor or to minimize the occurrence of current leaks. This method for producing a photovoltaic device is provided with: a step (a) in which a pyramid-like texture is formed on a first main surface of a silicon substrate (1); a step (b) in which first silicate glass (8) containing impurities of a first conductivity type is formed on the first main surface; a step (c) in which second silicate glass (9) that does not contain conductive impurities is formed on the first silicate glass (8); a step (d) in which the impurities of the first conductivity type that are included in the first silicate glass (8) are dispersed on the first main surface of the silicon substrate (1); a step (e) in which third silicate glass (10) containing impurities of the first conductivity type is formed on the second silicate glass (9); and a step (f) in which, after the step (e), impurities of a second conductivity type are dispersed on a second main surface of the silicon substrate (1).

Inventors:
SATO TAKEHIKO (JP)
NISHIMURA KUNIHIKO (JP)
NISHIMURA SHINYA (JP)
WATAHIKI TATSURO (JP)
Application Number:
PCT/JP2015/063432
Publication Date:
June 23, 2016
Filing Date:
May 11, 2015
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L31/18; H01L31/0236; H01L31/068
Domestic Patent References:
WO2014174613A12014-10-30
Foreign References:
JP2013219355A2013-10-24
JP2013187462A2013-09-19
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
Hidetoshi Yoshitake (JP)
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