Title:
METHOD FOR PRODUCING PIEZOELECTRIC FILM
Document Type and Number:
WIPO Patent Application WO/2019/139100
Kind Code:
A1
Abstract:
The present invention provides a highly productive method for producing alkali niobate/tantalate alignment films, the method using hydrothermal synthesis and enabling the production of thicker films. The present invention also provides a piezoelectric body that uses this alignment film; and a functional device. A substrate is immersed in a water-containing solvent containing an alkali hydroxide and an amorphous niobium/tantalum oxide in a reactor, and heat and pressure is applied thereto, to deposit an alkali niobate/tantalate film having a perovskite-type crystal structure on the substrate. The niobium/tantalum oxide is a simple substance, solid solution, or mixture of niobium oxide and tantalum oxide, as represented by the average compositional formula (Nb1-xTax)2O5 (in the formula, 0 ≤ x ≤ 1), wherein these may be hydrates. The alkali niobate/tantalate film is a crystal containing alkali niobate/tantalate represented by the formula A(Nb1-xTax)O3 (in the formula, A is one or two or more alkali metals wherein any proportions may be used for the two or more alkali metals, and 0 ≤ x ≤ 1).
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Inventors:
FUNAKUBO HIROSHI (JP)
TATEYAMA AKINORI (JP)
ITO YOSHIHARU (JP)
SHIMIZU TAKAO (JP)
ORINO YUICHIRO (JP)
KUROSAWA MINORU (JP)
UCHIDA HIROSHI (JP)
SHIRAISHI TAKAHISA (JP)
KIGUCHI TAKANORI (JP)
KUMADA NOBUHIRO (JP)
TATEYAMA AKINORI (JP)
ITO YOSHIHARU (JP)
SHIMIZU TAKAO (JP)
ORINO YUICHIRO (JP)
KUROSAWA MINORU (JP)
UCHIDA HIROSHI (JP)
SHIRAISHI TAKAHISA (JP)
KIGUCHI TAKANORI (JP)
KUMADA NOBUHIRO (JP)
Application Number:
PCT/JP2019/000593
Publication Date:
July 18, 2019
Filing Date:
January 10, 2019
Export Citation:
Assignee:
TOKYO INST TECH (JP)
SOPHIA SCHOOL CORP (JP)
UNIV TOHOKU (JP)
UNIV YAMANASHI (JP)
SOPHIA SCHOOL CORP (JP)
UNIV TOHOKU (JP)
UNIV YAMANASHI (JP)
International Classes:
C01G35/00; H01L41/09; H01L41/107; H01L41/113; H01L41/187; H01L41/317
Domestic Patent References:
| WO2012056658A1 | 2012-05-03 | |||
| WO2011010484A1 | 2011-01-27 |
Foreign References:
| US20170368574A1 | 2017-12-28 | |||
| CN102285797A | 2011-12-21 | |||
| JP2006294583A | 2006-10-26 | |||
| JP2012246202A | 2012-12-13 |
Other References:
SHIRAISHI, T. ET AL.: "Growth of 130µm Thick Epitaxial KNbO3 Film by Hydrothermal Method", MRS ONLINE PROCEEDINGS LIBRARY, vol. 1494, 23 January 2013 (2013-01-23), pages 291 - 296, XP055625497, ISSN: 1946-4274
SHIRAISHI, T. ET AL.: "Ferroelectric and piezoelectric properties of KNb03 films deposited on flexible organic substrate by hydrothermal method", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 53, no. 9S, 3 September 2014 (2014-09-03), pages 09PA10/1 - 09PA10/4, XP001591657, ISSN: 1347-4065
SHIRAISHI, T. ET AL.: "Ferroelectric and piezoelectric properties of KNb03 films deposited on flexible organic substrate by hydrothermal method", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 53, no. 9S, 3 September 2014 (2014-09-03), pages 09PA10/1 - 09PA10/4, XP001591657, ISSN: 1347-4065
Attorney, Agent or Firm:
AOKI, Atsushi et al. (JP)
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