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Patent Searching and Data


Title:
METHOD FOR PRODUCING POLYSILICON
Document Type and Number:
WIPO Patent Application WO/2014/010457
Kind Code:
A1
Abstract:
[Problem] The purpose of the invention is to recover heat efficiently from high-temperature exhaust gas generated from a polysilicon deposition step. The purpose of the invention is also to improve the production efficiency by reducing the adhesion and residues of silicon fine powder and polymer in the pipes and equipment, improving the efficiency of the recovery of unreacted raw material gas and the like, lowering the washing frequency, and making possible long-term, continuous operation. [Solution] This method for producing polysilicon comprises: a deposition step for depositing polysilicon using raw material gas containing chlorosilanes; and a heat-recovery step for feeding exhaust gas from the deposition step to a boiler-type heat recovery device provided with an exhaust gas pipe, and recovering the heat; and is characterized in that the outlet gas temperature of the exhaust gas pipe in the boiler-type heat recovery device is set at 200°C or higher and the exhaust gas flow rate at the exhaust gas pipe outlet in the boiler-type heat recovery device is adjusted to 10 m/sec or higher.

Inventors:
SAKIDA MANABU (JP)
WAKAMATSU SATORU (JP)
YOSHIMATSU NOBUAKI (JP)
Application Number:
PCT/JP2013/068040
Publication Date:
January 16, 2014
Filing Date:
July 01, 2013
Export Citation:
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Assignee:
TOKUYAMA CORP (JP)
International Classes:
C01B33/03; C01B33/035
Foreign References:
JP2010100455A2010-05-06
JP2005008430A2005-01-13
JP2010150131A2010-07-08
JP2008266127A2008-11-06
JP4064918B22008-03-19
Other References:
See also references of EP 2871155A4
Attorney, Agent or Firm:
MAEDA & SUZUKI (JP)
Maeda and a Suzuki international patent business corporation (JP)
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