Title:
METHOD FOR PRODUCING SEMI-POLAR SELF-SUPPORTING SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2020/045005
Kind Code:
A1
Abstract:
The present invention provides a method for producing a semi-polar self-supporting substrate, in which a preparation step (S10) wherein a semi-polar seed substrate that is composed of a group III nitride semiconductor is prepared, said seed substrate having a semi-polar surface as a main surface, a group III nitride semiconductor layer formation step (S20) wherein a group III nitride semiconductor layer is formed by epitaxially growing a group III nitride semiconductor on the semi-polar seed substrate, a cut-out step (S30) wherein a semi-polar self-supporting substrate, which has the semi-polar surface as a main surface, is cut out from the group III nitride semiconductor layer, and a processing step (S40) wherein all the remaining group III nitride semiconductor layer is removed from the semi-polar seed substrate on which a part of the group III nitride semiconductor layer remains are performed, and subsequently the group III nitride semiconductor layer formation step and the cut-out step are performed, while reusing the semi-polar seed substrate.
Inventors:
GOTO HIROKI (JP)
ISHIHARA YUJIRO (JP)
FUDA SHOICHI (JP)
ISHIHARA YUJIRO (JP)
FUDA SHOICHI (JP)
Application Number:
PCT/JP2019/031168
Publication Date:
March 05, 2020
Filing Date:
August 07, 2019
Export Citation:
Assignee:
FURUKAWA CO LTD (JP)
International Classes:
C30B29/38; C23C16/34; C30B25/20; H01L21/365
Domestic Patent References:
WO2017164233A1 | 2017-09-28 |
Foreign References:
JP2018027893A | 2018-02-22 | |||
JP2018104279A | 2018-07-05 | |||
JP2015059069A | 2015-03-30 | |||
JP2014214035A | 2014-11-17 |
Attorney, Agent or Firm:
HAYAMI Shinji (JP)
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