Title:
METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT, IN PARTICULAR A SOLAR CELL, BASED ON A GERMANIUM THIN FILM
Document Type and Number:
WIPO Patent Application WO/2010/081857
Kind Code:
A3
Abstract:
The invention relates to a method for producing a semiconductor component, in particular a solar cell, based on a germanium thin film. The method comprises the following steps: providing a germanium substrate (1); forming a porous film (3) on a surface of the germanium substrate (1) by electrochemically etching the germanium substrate (1) in an etching solution (7); depositing a semiconductor thin film (5) on the porous film (3); and separating the semiconductor thin film (5) from the germanium substrate (1), wherein the porous film (3) is used as a predetermined breaking point. The polarity of a voltage applied between the germanium substrate (1) and an external electrode (11) is reversed multiple times during the electrochemical etching of the germanium substrate (1). In this way, a porous film can be produced in a germanium substrate, wherein the porous film enables the semiconductor thin film deposited thereon to be subsequently separated as part of a film transfer method.
Inventors:
GARRALAGA ROJAS ENRIQUE (ES)
TERHEIDEN BARBARA (DE)
HENSEN JAN (DE)
PLAGWITZ HEIKO (DE)
TERHEIDEN BARBARA (DE)
HENSEN JAN (DE)
PLAGWITZ HEIKO (DE)
Application Number:
PCT/EP2010/050416
Publication Date:
September 29, 2011
Filing Date:
January 14, 2010
Export Citation:
Assignee:
INST SOLARENERGIEFORSCHUNG GMBH (DE)
GARRALAGA ROJAS ENRIQUE (ES)
TERHEIDEN BARBARA (DE)
HENSEN JAN (DE)
PLAGWITZ HEIKO (DE)
GARRALAGA ROJAS ENRIQUE (ES)
TERHEIDEN BARBARA (DE)
HENSEN JAN (DE)
PLAGWITZ HEIKO (DE)
International Classes:
H01L21/02; C25F3/12; H01L21/3063; H01L31/18
Domestic Patent References:
| WO2004100268A1 | 2004-11-18 |
Foreign References:
| EP0867919A2 | 1998-09-30 | |||
| JPH07230983A | 1995-08-29 |
Other References:
FANG ET AL: "Electrochemical pore etching in germanium", JOURNAL OF ELECTROANALYTICAL CHEMISTRY AND INTERFACIALELECTRO CHEMISTRY, ELSEVIER, AMSTERDAM, NL, vol. 589, no. 2, 15 April 2006 (2006-04-15), pages 259 - 288, XP005415558, ISSN: 0022-0728, DOI: DOI:10.1016/J.JELECHEM.2006.02.021
G FLAMAND ET AL: "Formation of porous Ge using HF-based electrolytes", PHYS. STAT. SOL (C), vol. 2, no. 9, 1 January 2005 (2005-01-01), pages 3243 - 3247, XP055001798, DOI: 10-1002
BRENDEL R: "Thin-film crystalline silicon mini-modules using porous Si for layer transfer", SOLAR ENERGY, PERGAMON PRESS. OXFORD, GB, vol. 77, no. 6, 1 December 2004 (2004-12-01), pages 969 - 982, XP004661837, ISSN: 0038-092X, DOI: DOI:10.1016/J.SOLENER.2004.08.011
CHOI H C ET AL: "Preparation and Functionalization of Hydride Terminated Porous Germanium", CHEMICAL COMMUNICATIONS - CHEMCOM; [6015D], ROYAL SOCIETY OF CHEMISTRY, GB, no. 17, 1 July 2000 (2000-07-01), pages 1669 - 1670, XP008096322, ISSN: 1359-7345, DOI: DOI:10.1039/B00401 1H
G FLAMAND ET AL: "Formation of porous Ge using HF-based electrolytes", PHYS. STAT. SOL (C), vol. 2, no. 9, 1 January 2005 (2005-01-01), pages 3243 - 3247, XP055001798, DOI: 10-1002
BRENDEL R: "Thin-film crystalline silicon mini-modules using porous Si for layer transfer", SOLAR ENERGY, PERGAMON PRESS. OXFORD, GB, vol. 77, no. 6, 1 December 2004 (2004-12-01), pages 969 - 982, XP004661837, ISSN: 0038-092X, DOI: DOI:10.1016/J.SOLENER.2004.08.011
CHOI H C ET AL: "Preparation and Functionalization of Hydride Terminated Porous Germanium", CHEMICAL COMMUNICATIONS - CHEMCOM; [6015D], ROYAL SOCIETY OF CHEMISTRY, GB, no. 17, 1 July 2000 (2000-07-01), pages 1669 - 1670, XP008096322, ISSN: 1359-7345, DOI: DOI:10.1039/B00401 1H
Attorney, Agent or Firm:
KÜHN, Ralph (Elisenhof Elisenstraße 3, München, DE)
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