Title:
METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT, IN PARTICULAR A SOLAR CELL, BASED ON A SEMICONDUCTOR THIN FILM HAVING A DIRECT SEMICONDUCTOR MATERIAL
Document Type and Number:
WIPO Patent Application WO/2010/081858
Kind Code:
A3
Abstract:
The invention relates to a method for producing a semiconductor component, in particular a solar cell, based on a semiconductor thin film. The method comprises the following steps: providing a semiconductor substrate (1), wherein the semiconductor substrate (1) comprises a material having a direct semiconductor; forming a porous film (3) on a surface of the semiconductor substrate (1) by electrochemically etching the semiconductor substrate (1) in an etching solution (7); depositing a semiconductor thin film (5) on the porous film (3); and separating the semiconductor thin film (5) from the semiconductor substrate (1), wherein the porous film (3) is used as a predetermined breaking point. In this way, a porous film can be produced in a semiconductor substrate, wherein the porous film enables the semiconductor thin film deposited thereon to be subsequently separated and the semiconductor substrate to be reused as part of a film transfer method.
Inventors:
GARRALAGA ROJAS ENRIQUE (ES)
HENSEN JAN (DE)
PLAGWITZ HEIKO (DE)
HAMPE CARSTEN (DE)
HENSEN JAN (DE)
PLAGWITZ HEIKO (DE)
HAMPE CARSTEN (DE)
Application Number:
PCT/EP2010/050417
Publication Date:
September 15, 2011
Filing Date:
January 14, 2010
Export Citation:
Assignee:
INST SOLARENERGIEFORSCHUNG GMBH (DE)
GARRALAGA ROJAS ENRIQUE (ES)
HENSEN JAN (DE)
PLAGWITZ HEIKO (DE)
HAMPE CARSTEN (DE)
GARRALAGA ROJAS ENRIQUE (ES)
HENSEN JAN (DE)
PLAGWITZ HEIKO (DE)
HAMPE CARSTEN (DE)
International Classes:
H01L21/02; C25F3/12; H01L21/3063; H01L31/18
Foreign References:
EP1050901A2 | 2000-11-08 | |||
EP1385200A2 | 2004-01-28 | |||
US5811348A | 1998-09-22 | |||
EP0867919A2 | 1998-09-30 |
Other References:
BEJI L ET AL: "Morphology and photoluminescence studies of electrochemically etched heavily doped p-type GaAs in HF solution", MICROELECTRONICS JOURNAL, MACKINTOSH PUBLICATIONS LTD. LUTON, GB, vol. 34, no. 10, 1 October 2003 (2003-10-01), pages 969 - 974, XP004460361, ISSN: 0026-2692, DOI: DOI:10.1016/S0026-2692(03)00183-6
TOSHIYUKI FUJINO ET AL: "Size-Controlled Porous Nanostructures Formed on InP(001) Substrates by Two-Step Electrochemical Process", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 46, no. No. 7A, 1 July 2007 (2007-07-01), pages 4375 - 4380, XP055001721, ISSN: 0021-4922, DOI: 10.1143/JJAP.46.4375
FANG ET AL: "Electrochemical pore etching in germanium", JOURNAL OF ELECTROANALYTICAL CHEMISTRY AND INTERFACIALELECTRO CHEMISTRY, ELSEVIER, AMSTERDAM, NL, vol. 589, no. 2, 15 April 2006 (2006-04-15), pages 259 - 288, XP005415558, ISSN: 0022-0728, DOI: DOI:10.1016/J.JELECHEM.2006.02.021
H. FÖLL ET AL: "Pores in III-V Semiconductors", ADVANCED MATERIALS, vol. 15, no. 3, 5 February 2003 (2003-02-05), pages 183 - 198, XP055001398, ISSN: 0935-9648, DOI: 10.1002/adma.200390043
BRENDEL R: "Thin-film crystalline silicon mini-modules using porous Si for layer transfer", SOLAR ENERGY, PERGAMON PRESS. OXFORD, GB, vol. 77, no. 6, 1 December 2004 (2004-12-01), pages 969 - 982, XP004661837, ISSN: 0038-092X, DOI: DOI:10.1016/J.SOLENER.2004.08.011
TOSHIYUKI FUJINO ET AL: "Size-Controlled Porous Nanostructures Formed on InP(001) Substrates by Two-Step Electrochemical Process", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 46, no. No. 7A, 1 July 2007 (2007-07-01), pages 4375 - 4380, XP055001721, ISSN: 0021-4922, DOI: 10.1143/JJAP.46.4375
FANG ET AL: "Electrochemical pore etching in germanium", JOURNAL OF ELECTROANALYTICAL CHEMISTRY AND INTERFACIALELECTRO CHEMISTRY, ELSEVIER, AMSTERDAM, NL, vol. 589, no. 2, 15 April 2006 (2006-04-15), pages 259 - 288, XP005415558, ISSN: 0022-0728, DOI: DOI:10.1016/J.JELECHEM.2006.02.021
H. FÖLL ET AL: "Pores in III-V Semiconductors", ADVANCED MATERIALS, vol. 15, no. 3, 5 February 2003 (2003-02-05), pages 183 - 198, XP055001398, ISSN: 0935-9648, DOI: 10.1002/adma.200390043
BRENDEL R: "Thin-film crystalline silicon mini-modules using porous Si for layer transfer", SOLAR ENERGY, PERGAMON PRESS. OXFORD, GB, vol. 77, no. 6, 1 December 2004 (2004-12-01), pages 969 - 982, XP004661837, ISSN: 0038-092X, DOI: DOI:10.1016/J.SOLENER.2004.08.011
Attorney, Agent or Firm:
KÜHN, Ralph (Elisenhof Elisenstraße 3, München, DE)
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