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Title:
METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT, IN PARTICULAR A SOLAR CELL, BASED ON A SEMICONDUCTOR THIN FILM HAVING A DIRECT SEMICONDUCTOR MATERIAL
Document Type and Number:
WIPO Patent Application WO/2010/081858
Kind Code:
A3
Abstract:
The invention relates to a method for producing a semiconductor component, in particular a solar cell, based on a semiconductor thin film. The method comprises the following steps: providing a semiconductor substrate (1), wherein the semiconductor substrate (1) comprises a material having a direct semiconductor; forming a porous film (3) on a surface of the semiconductor substrate (1) by electrochemically etching the semiconductor substrate (1) in an etching solution (7); depositing a semiconductor thin film (5) on the porous film (3); and separating the semiconductor thin film (5) from the semiconductor substrate (1), wherein the porous film (3) is used as a predetermined breaking point. In this way, a porous film can be produced in a semiconductor substrate, wherein the porous film enables the semiconductor thin film deposited thereon to be subsequently separated and the semiconductor substrate to be reused as part of a film transfer method.

Inventors:
GARRALAGA ROJAS ENRIQUE (ES)
HENSEN JAN (DE)
PLAGWITZ HEIKO (DE)
HAMPE CARSTEN (DE)
Application Number:
PCT/EP2010/050417
Publication Date:
September 15, 2011
Filing Date:
January 14, 2010
Export Citation:
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Assignee:
INST SOLARENERGIEFORSCHUNG GMBH (DE)
GARRALAGA ROJAS ENRIQUE (ES)
HENSEN JAN (DE)
PLAGWITZ HEIKO (DE)
HAMPE CARSTEN (DE)
International Classes:
H01L21/02; C25F3/12; H01L21/3063; H01L31/18
Foreign References:
EP1050901A22000-11-08
EP1385200A22004-01-28
US5811348A1998-09-22
EP0867919A21998-09-30
Other References:
BEJI L ET AL: "Morphology and photoluminescence studies of electrochemically etched heavily doped p-type GaAs in HF solution", MICROELECTRONICS JOURNAL, MACKINTOSH PUBLICATIONS LTD. LUTON, GB, vol. 34, no. 10, 1 October 2003 (2003-10-01), pages 969 - 974, XP004460361, ISSN: 0026-2692, DOI: DOI:10.1016/S0026-2692(03)00183-6
TOSHIYUKI FUJINO ET AL: "Size-Controlled Porous Nanostructures Formed on InP(001) Substrates by Two-Step Electrochemical Process", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 46, no. No. 7A, 1 July 2007 (2007-07-01), pages 4375 - 4380, XP055001721, ISSN: 0021-4922, DOI: 10.1143/JJAP.46.4375
FANG ET AL: "Electrochemical pore etching in germanium", JOURNAL OF ELECTROANALYTICAL CHEMISTRY AND INTERFACIALELECTRO CHEMISTRY, ELSEVIER, AMSTERDAM, NL, vol. 589, no. 2, 15 April 2006 (2006-04-15), pages 259 - 288, XP005415558, ISSN: 0022-0728, DOI: DOI:10.1016/J.JELECHEM.2006.02.021
H. FÖLL ET AL: "Pores in III-V Semiconductors", ADVANCED MATERIALS, vol. 15, no. 3, 5 February 2003 (2003-02-05), pages 183 - 198, XP055001398, ISSN: 0935-9648, DOI: 10.1002/adma.200390043
BRENDEL R: "Thin-film crystalline silicon mini-modules using porous Si for layer transfer", SOLAR ENERGY, PERGAMON PRESS. OXFORD, GB, vol. 77, no. 6, 1 December 2004 (2004-12-01), pages 969 - 982, XP004661837, ISSN: 0038-092X, DOI: DOI:10.1016/J.SOLENER.2004.08.011
Attorney, Agent or Firm:
KÜHN, Ralph (Elisenhof Elisenstraße 3, München, DE)
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